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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC0908NSATMA1MOSFET N-CH 34V 14A/49A TDSON Infineon Technologies |
6,255 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 49A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 14 nC @ 10 V | 34 V | ±20V | 1220 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR5305CPBFMOSFET P-CH 55V 31A DPAK Infineon Technologies |
2,761 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 55 V | ±20V | 1200 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB5620PBFXKMA1TRENCH >=100V Infineon Technologies |
9,922 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | Through Hole | 5V @ 100µA | 38 nC @ 10 V | 200 V | ±20V | 1710 pF @ 50 V | - | - | PG-TO220-3-904 | - | 144W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB7437GPBFMOSFET N CH 40V 195A TO220AB Infineon Technologies |
3,617 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | Through Hole | 3.9V @ 150µA | 225 nC @ 10 V | 40 V | ±20V | 7330 pF @ 25 V | - | - | TO-220AB | - | - | - |
|
|
IRFB3306PBFXKMA1TRENCH 40<-<100V Infineon Technologies |
988 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB80N06S405ATMA2MOSFET N-CH 60V 80A TO263-3 Infineon Technologies |
231 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | Surface Mount | 4V @ 60µA | 81 nC @ 10 V | 60 V | ±20V | 6500 pF @ 25 V | AEC-Q101 | - | PG-TO263-3-2 | Automotive | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI80N06S407AKSA2MOSFET N-CH 60V 80A TO262-3 Infineon Technologies |
675 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | Through Hole | 4V @ 40µA | 56 nC @ 10 V | 60 V | ±20V | 4500 pF @ 25 V | AEC-Q101 | - | PG-TO262-3-1 | Automotive | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI80N04S403AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
498 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | Through Hole | 4V @ 53µA | 66 nC @ 10 V | 40 V | ±20V | 5260 pF @ 25 V | - | - | PG-TO262-3 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF7734M2TRMOSFET N-CH 40V 17A DIRECTFET M2 Infineon Technologies |
3,008 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric M2 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Ta) | 10V | 4.9mOhm @ 43A, 10V | Surface Mount | 4V @ 100µA | 72 nC @ 10 V | 40 V | ±20V | 2545 pF @ 25 V | - | - | DirectFET™ Isometric M2 | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP70N04S406AKSA1MOSFET N-CH 40V 70A TO220-3-1 Infineon Technologies |
7,660 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | Through Hole | 4V @ 26µA | 32 nC @ 10 V | 40 V | ±20V | 2550 pF @ 25 V | - | - | PG-TO220-3-1 | - | 58W (Tc) | -55°C ~ 175°C (TJ) |
