Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 77

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SPP21N10 MOSFET N-CH 100V 21A TO220-3 Infineon Technologies	4,840	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	80mOhm @ 15A, 10V	Through Hole	4V @ 44µA	38.4 nC @ 10 V	100 V	±20V	865 pF @ 25 V	-	-	PG-TO220-3-1	-	90W (Tc)	-55°C ~ 175°C (TJ)
IPB80P04P4L08ATMA2 MOSFET P-CH 40V 80A TO263-3 Infineon Technologies	1,986	-	询价单	数据表	OptiMOS™ P2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	8.2mOhm @ 80A, 10V	Surface Mount	2.2V @ 120µA	92 nC @ 10 V	40 V	+5V, -16V	5430 pF @ 25 V	-	-	PG-TO263-3-2	-	75W (Tc)	-55°C ~ 175°C (TJ)
IPD65R420CFDATMA2 MOSFET N-CH 650V 8.7A TO252-3 Infineon Technologies	2,490	-	询价单	数据表	CoolMOS™ CFD2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8.7A (Tc)	10V	420mOhm @ 3.4A, 10V	Surface Mount	4.5V @ 300µA	31.5 nC @ 10 V	650 V	±20V	870 pF @ 100 V	-	-	PG-TO252-3-341	-	83.3W (Tc)	-55°C ~ 150°C (TJ)
IAUCN04S6N013TATMA1 MOSFET_(20V 40V) Infineon Technologies	1,150	-	询价单	数据表	OptiMOS™ 6	10-LSOP (0.216", 5.48mm Width) Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	230A (Tc)	7V, 10V	1.32mOhm @ 60A, 10V	Surface Mount	3V @ 60µA	69 nC @ 10 V	40 V	±20V	4810 pF @ 25 V	AEC-Q101	-	PG-LHDSO-10-1	Automotive	133W (Tc)	-55°C ~ 175°C (TJ)
IPD60R1K5CEATMA1 MOSFET N-CH 600V 3.1A TO252-3 Infineon Technologies	18	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.5Ohm @ 1.1A, 10V	Surface Mount	3.5V @ 90µA	9.4 nC @ 10 V	600 V	±20V	200 pF @ 100 V	-	-	PG-TO252-3	-	28W (Tc)	-40°C ~ 150°C (TJ)
IRF7478TRPBF MOSFET N-CH 60V 7A 8SO Infineon Technologies	9,993	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	26mOhm @ 4.2A, 10V	Surface Mount	3V @ 250µA	31 nC @ 4.5 V	60 V	±20V	1740 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IPA126N10NM3SXKSA1 MOSFET N-CH 100V 39A TO220 Infineon Technologies	231	-	询价单	数据表	OptiMOS™ 3	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	6V, 10V	12.6mOhm @ 35A, 10V	Through Hole	3.5V @ 45µA	35 nC @ 10 V	100 V	±20V	2500 pF @ 50 V	-	-	PG-TO220 Full Pack	-	33W (Tc)	-55°C ~ 175°C (TJ)
IPP65R420CFDXKSA2 MOSFET N-CH 650V 8.7A TO220-3 Infineon Technologies	488	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8.7A (Tc)	10V	420mOhm @ 3.4A, 10V	Through Hole	4.5V @ 300µA	31.5 nC @ 10 V	650 V	±20V	870 pF @ 100 V	-	-	PG-TO220-3	-	83.3W (Tc)	-55°C ~ 150°C (TJ)
IRF9328TRPBF MOSFET P-CH 30V 12A 8SO Infineon Technologies	3,424	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	11.9mOhm @ 12A, 10V	Surface Mount	2.4V @ 25µA	52 nC @ 10 V	30 V	±20V	1680 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRFH4234TRPBF MOSFET N-CH 25V 22A PQFN Infineon Technologies	8,408	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	4.5V, 10V	4.6mOhm @ 30A	Surface Mount	2.1V @ 25µA	17 nC @ 10 V	25 V	±20V	1011 pF @ 13 V	-	-	PQFN (5x6)	-	3.5W (Ta), 27W (Tc)	-55°C ~ 150°C (TJ)

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