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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD100N04S4L02ATMA1MOSFET N-CHANNEL_30/40V Infineon Technologies |
2,086 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | Surface Mount | 2.2V @ 95µA | 156 nC @ 10 V | 40 V | +20V, -16V | 12800 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-313 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB80N04S2H4ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
6,134 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 148 nC @ 10 V | 40 V | ±20V | 4400 pF @ 25 V | - | - | PG-TO263-3-2 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR9343-701PBFMOSFET P-CH 55V 20A IPAK Infineon Technologies |
3,570 | - |
|
数据表 |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | Surface Mount | 1V @ 250µA | 47 nC @ 10 V | 55 V | ±20V | 660 pF @ 50 V | - | - | I-PAK (LF701) | - | 79W (Tc) | -40°C ~ 175°C (TJ) |
|
IPP50R250CPXKSA1LOW POWER_LEGACY Infineon Technologies |
500 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | Through Hole | 3.5V @ 520µA | 36 nC @ 10 V | 500 V | ±20V | 1420 pF @ 100 V | - | - | PG-TO220-3-1 | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA052N08NM5SXKSA1MOSFET N-CH 80V 64A TO220 Infineon Technologies |
360 | - |
|
数据表 |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 64A (Tc) | 6V, 10V | 5.2mOhm @ 32A, 10V | Through Hole | 3.8V @ 65µA | 56 nC @ 10 V | 80 V | ±20V | 3800 pF @ 40 V | - | - | PG-TO220 Full Pack | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF1010ZLPBFMOSFET N-CH 55V 75A TO262 Infineon Technologies |
6,528 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 95 nC @ 10 V | 55 V | ±20V | 2840 pF @ 25 V | - | - | TO-262 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF1010EZLPBFMOSFET N-CH 60V 75A TO262 Infineon Technologies |
6,298 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | Through Hole | 4V @ 100µA | 86 nC @ 10 V | 60 V | ±20V | 2810 pF @ 25 V | - | - | TO-262 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB3306GPBFMOSFET N-CH 60V 120A TO220AB Infineon Technologies |
6,888 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | Through Hole | 4V @ 150µA | 120 nC @ 10 V | 60 V | ±20V | 4520 pF @ 50 V | - | - | TO-220AB | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IAUCN08S7N019ATMA1MOSFET_(75V 120V( Infineon Technologies |
4,995 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 175A | 10V | - | Surface Mount | - | 19 nC @ 10 V | 80 V | - | - | AEC-Q101 | - | PG-TDSON-8-43 | Automotive | - | -55°C ~ 175°C |
|
BSC057N03MSGATMA1MOSFET N-CH 30V 15A/71A TDSON Infineon Technologies |
6,061 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 71A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 40 nC @ 10 V | 30 V | ±16V | 3100 pF @ 15 V | - | - | PG-TDSON-8-5 | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) |
