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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH5053TRPBFXUMA1TRENCH >=100V Infineon Technologies |
3,524 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB16CN10N GMOSFET N-CH 100V 53A D2PAK Infineon Technologies |
5,699 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 53A (Tc) | 10V | 16.5mOhm @ 53A, 10V | Surface Mount | 4V @ 61µA | 48 nC @ 10 V | 100 V | ±20V | 3220 pF @ 50 V | - | - | PG-TO263-3 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC022N03SMOSFET N-CH 30V 28A/100A TDSON Infineon Technologies |
2,035 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | Surface Mount | 2V @ 100µA | 58 nC @ 5 V | 30 V | ±20V | 7490 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPB35N10 GMOSFET N-CH 100V 35A TO263-3 Infineon Technologies |
8,227 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | Surface Mount | 4V @ 83µA | 65 nC @ 10 V | 100 V | ±20V | 1570 pF @ 25 V | - | - | PG-TO263-3-2 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI120N04S402AKSA1MOSFET N-CH 40V 120A TO262-3 Infineon Technologies |
500 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | 2.1mOhm @ 100A, 10V | Through Hole | 4V @ 110µA | 134 nC @ 10 V | 40 V | ±20V | 10740 pF @ 25 V | - | - | PG-TO262-3 | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
|
ISZ113N10NM5LF2ATMA1ISZ113N10NM5LF2ATMA1 MOSFET Infineon Technologies |
4,970 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPA60R210CFD7XKSA1LOW POWER_NEW Infineon Technologies |
500 | - |
|
数据表 |
- | - | Tube | Active | - | - | 7A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPI65R380C6XKSA1MOSFET N-CH 650V 10.6A TO262-3 Infineon Technologies |
500 | - |
|
数据表 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | Through Hole | 3.5V @ 320µA | 39 nC @ 10 V | 650 V | ±20V | 710 pF @ 100 V | - | - | PG-TO262-3 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPAN60R180CM8XKSA1IPAN60R180CM8XKSA1 Infineon Technologies |
256 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tj) | 10V | 180mOhm @ 5.6A, 10V | Through Hole | 4.7V @ 140µA | 17 nC @ 10 V | 600 V | ±20V | 743 pF @ 400 V | - | - | PG-TO220 Full Pack | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP60R180CM8XKSA1IPP60R180CM8XKSA1 Infineon Technologies |
135 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 180mOhm @ 5.6A, 10V | Through Hole | 4.7V @ 140µA | 17 nC @ 10 V | 600 V | ±20V | 743 pF @ 400 V | - | - | PG-TO220-3-1 | - | 142W (Tc) | -55°C ~ 150°C (TJ) |
