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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPB80N06S2L-09MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
3,897 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | Surface Mount | 2V @ 125µA | 105 nC @ 10 V | 55 V | ±20V | 3480 pF @ 25 V | - | - | PG-TO263-3-2 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD70N12S311ATMA2MOSFET_(120V 300V) Infineon Technologies |
5,638 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 11.1mOhm @ 70A, 10V | Surface Mount | 4V @ 83µA | 65 nC @ 10 V | 120 V | ±20V | 4355 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-11 | Automotive | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPB60R280P6ATMA1MOSFET N-CH 600V 13.8A D2PAK Infineon Technologies |
982 | - |
|
数据表 |
CoolMOS™ P6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | Surface Mount | 4.5V @ 430µA | 25.5 nC @ 10 V | 600 V | ±20V | 1190 pF @ 100 V | - | - | PG-TO263-3 | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
AUIRFR4292TRLMOSFET N-CH 250V 9.3A DPAK Infineon Technologies |
9,665 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | Surface Mount | 5V @ 50µA | 20 nC @ 10 V | 250 V | ±20V | 705 pF @ 25 V | - | - | DPAK | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFR3504ZTRLMOSFET N-CH 40V 42A DPAK Infineon Technologies |
3,841 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | - | 9mOhm @ 42A, 10V | Surface Mount | 4V @ 250µA | 45 nC @ 10 V | 40 V | - | 1510 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 90W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFL4310PBFMOSFET N-CH 100V SOT223 Infineon Technologies |
2,205 | - |
|
数据表 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 10V | - | Surface Mount | - | 25 nC @ 10 V | 100 V | ±20V | 330 pF @ 25 V | - | - | - | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IAUCN04S6N009TATMA1MOSFET_(20V 40V) Infineon Technologies |
1,875 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPB90N04S402ATMA1MOSFET N-CH 40V 90A D2PAK Infineon Technologies |
995 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 2.1mOhm @ 90A, 10V | Surface Mount | 4V @ 95µA | 118 nC @ 10 V | 40 V | ±20V | 9430 pF @ 25 V | - | - | PG-TO263-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP073N13NM6AKSA1TRENCH >=100V Infineon Technologies |
462 | - |
|
数据表 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IQE004NE1LM7CGATMA1TRENCH <= 40V Infineon Technologies |
9,900 | - |
|
数据表 |
OptiMOS™ 7 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Ta), 379A (Tc) | 4.5V, 7V | 0.45mOhm @ 30A, 7V | Surface Mount | 2V @ 432µA | 55 nC @ 7 V | 15 V | ±7V | 6240 pF @ 7.5 V | - | - | PG-TTFN-9-3 | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) |
