Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 82

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
ISC078N12NM6ATMA1 TRENCH >=100V Infineon Technologies	4,885	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13.2A (Ta), 85A (Tc)	8V, 10V	7.8mOhm @ 37A, 10V	Surface Mount	3.6V @ 49.6µA	26 nC @ 10 V	120 V	±20V	2000 pF @ 60 V	-	-	SuperSO8	-	3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)
IQE004NE1LM7ATMA1 TRENCH <= 40V Infineon Technologies	4,360	-	询价单	数据表	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58A (Ta), 379A (Tc)	4.5V, 7V	0.45mOhm @ 30A, 7V	Surface Mount	2V @ 432µA	55 nC @ 7 V	15 V	±7V	6240 pF @ 7.5 V	-	-	PG-TSON-8-5	-	2.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)
IRF7805ZGTRPBF MOSFET N-CH 30V 16A 8SO Infineon Technologies	8,149	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	4.5V, 10V	6.8mOhm @ 16A, 10V	Surface Mount	2.25V @ 250µA	27 nC @ 4.5 V	30 V	±20V	2080 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRFSL5615PBF MOSFET N-CH 150V 33A TO262 Infineon Technologies	964	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	42mOhm @ 21A, 10V	Through Hole	5V @ 100µA	40 nC @ 10 V	150 V	±20V	1750 pF @ 50 V	-	-	TO-262	-	144W (Tc)	-55°C ~ 175°C (TJ)
IQE220N15NM5CGATMA1 TRENCH >=100V Infineon Technologies	4,970	-	询价单	数据表	OptiMOS™ 5	9-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	22mOhm @ 16A, 10V	Surface Mount	4.6V @ 46µA	18.3 nC @ 10 V	150 V	±20V	1400 pF @ 75 V	-	-	PG-TTFN-9-3	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IQE220N15NM5ATMA1 TRENCH >=100V Infineon Technologies	5,000	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta), 44A (Tc)	8V, 10V	22mOhm @ 16A, 10V	Surface Mount	4.6V @ 46µA	18 nC @ 10 V	150 V	±20V	1400 pF @ 75 V	-	-	PG-TSON-8-5	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IRF3007STRLPBF MOSFET N CH 75V 62A D2PAK Infineon Technologies	3,095	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	62A (Tc)	10V	12.6mOhm @ 48A, 10V	Surface Mount	4V @ 250µA	130 nC @ 10 V	75 V	±20V	3270 pF @ 25 V	-	-	D2PAK	-	120W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S209ATMA2 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	777	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	8.8mOhm @ 50A, 10V	Surface Mount	4V @ 125µA	80 nC @ 10 V	55 V	±20V	2360 pF @ 25 V	-	-	PG-TO263-3-2	-	190W (Tc)	-55°C ~ 175°C (TJ)
IPA65R310CFDXKSA2 MOSFET N-CH 650V 11.4A TO220 Infineon Technologies	536	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.4A (Tc)	10V	310mOhm @ 4.4A, 10V	Through Hole	4.5V @ 400µA	41 nC @ 10 V	650 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-FP	-	32W (Tc)	-55°C ~ 150°C (TJ)
IPP65R310CFDXKSA2 MOSFET N-CH 650V 11.4A TO220-3 Infineon Technologies	500	-	询价单	数据表	CoolMOS™ CFD2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	11.4A (Tc)	10V	310mOhm @ 4.4A, 10V	Through Hole	4.5V @ 400µA	41 nC @ 10 V	650 V	±20V	1100 pF @ 100 V	-	-	PG-TO220-3	-	104.2W (Tc)	-55°C ~ 150°C (TJ)

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