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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD30N08S222ATMA1MOSFET N-CH 75V 30A TO252-3 Infineon Technologies |
1,773 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 21.5mOhm @ 50A, 10V | Surface Mount | 4V @ 80µA | 57 nC @ 10 V | 75 V | ±20V | 1400 pF @ 25 V | - | - | PG-TO252-3-11 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7410GTRPBFMOSFET P-CH 12V 16A 8SO Infineon Technologies |
3,578 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | Surface Mount | 900mV @ 250µA | 91 nC @ 4.5 V | 12 V | ±8V | 8676 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPP029N06NXKSA1TRENCH 40<-<100V Infineon Technologies |
495 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | Through Hole | 3.3V @ 75µA | 66 nC @ 10 V | 60 V | ±20V | 5125 pF @ 30 V | - | - | PG-TO220-3-1 | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLR8726TRLPBFMOSFET N-CH 30V 86A DPAK Infineon Technologies |
3,468 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | Surface Mount | 2.35V @ 50µA | 23 nC @ 4.5 V | 30 V | ±20V | 2150 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IAUAN04S7N006AUMA1IAUAN04S7N006AUMA1 Infineon Technologies |
475 | - |
|
数据表 |
OptiMOS™ 7 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Ta), 410A (Tj) | 7V, 10V | 0.57mOhm @ 100A, 10V | Surface Mount | 3V @ 95µA | 123 nC @ 10 V | 40 V | ±20V | 8360 pF @ 20 V | AEC-Q101 | - | PG-HSOF-5-1 | Automotive | 179W (Tc) | -55°C ~ 175°C (TJ) |
|
|
ISZ143N13NM6ATMA1TRENCH >=100V Infineon Technologies |
4,915 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFH8337TRPBFMOSFET N-CH 30V 12A/35A PQFN Infineon Technologies |
8,787 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | Surface Mount | 2.35V @ 25µA | 10 nC @ 10 V | 30 V | ±20V | 790 pF @ 10 V | - | - | PQFN (5x6) | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) |
|
IPI26CN10N GMOSFET N-CH 100V 35A TO262-3 Infineon Technologies |
6,171 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | Through Hole | 4V @ 39µA | 31 nC @ 10 V | 100 V | ±20V | 2070 pF @ 50 V | - | - | PG-TO262-3 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR5410TRLMOSFET P-CH 100V 13A DPAK Infineon Technologies |
2,913 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | Surface Mount | 4V @ 250µA | 58 nC @ 10 V | 100 V | ±20V | 760 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFR5410TRRMOSFET P-CH 100V 13A DPAK Infineon Technologies |
2,053 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | Surface Mount | 4V @ 250µA | 58 nC @ 10 V | 100 V | ±20V | 760 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
