Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 73

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IAUC120N06S5L022ATMA1 MOSFET_)40V 60V) Infineon Technologies	3,616	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	170A (Tj)	4.5V, 10V	2.2mOhm @ 60A, 10V	Surface Mount	2.2V @ 65µA	77 nC @ 10 V	60 V	±20V	5651 pF @ 30 V	-	-	PG-TDSON-8-34	-	136W (Tc)	-55°C ~ 175°C (TJ)
ISC110N12NM6ATMA1 TRENCH >=100V Infineon Technologies	4,746	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 62A (Tc)	8V, 10V	11mOhm @ 26A, 10V	Surface Mount	3.6V @ 35µA	19.3 nC @ 10 V	120 V	±20V	1400 pF @ 60 V	-	-	SuperSO8	-	3W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
IPB80N06S407ATMA2 MOSFET N-CH 60V 80A TO263-3 Infineon Technologies	707	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	-	Surface Mount	4V @ 40µA	56 nC @ 10 V	60 V	±20V	4500 pF @ 25 V	AEC-Q101	-	PG-TO263-3-2	Automotive	79W (Tc)	-55°C ~ 175°C (TJ)
IRFR5410TRRPBF MOSFET P-CH 100V 13A DPAK Infineon Technologies	3,000	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	205mOhm @ 7.8A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	100 V	±20V	760 pF @ 25 V	-	-	TO-252AA (DPAK)	-	66W (Tc)	-55°C ~ 150°C (TJ)
IPP90R1K2C3XKSA2 MOSFET N-CH 900V 5.1A TO220-3 Infineon Technologies	9,798	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	5.1A (Tc)	10V	1.2Ohm @ 2.8A, 10V	Through Hole	3.5V @ 310µA	28 nC @ 10 V	900 V	±20V	710 pF @ 100 V	-	-	PG-TO220-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPP80R600P7XKSA1 MOSFET N-CH 800V 8A TO220-3 Infineon Technologies	3,795	-	询价单	数据表	CoolMOS™ P7	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	600mOhm @ 3.4A, 10V	Through Hole	3.5V @ 170µA	20 nC @ 10 V	800 V	±20V	570 pF @ 500 V	-	-	PG-TO220-3	-	60W (Tc)	-55°C ~ 150°C (TJ)
AUIRFS3306 MOSFET N-CH 60V 120A D2PAK Infineon Technologies	9,893	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.2mOhm @ 75A, 10V	Surface Mount	4V @ 150µA	125 nC @ 10 V	60 V	±20V	4520 pF @ 50 V	-	-	PG-TO263-3	-	230W (Tc)	-55°C ~ 175°C (TJ)
IPA060N06NM5SXKSA1 MOSFET N-CH 60V 56A TO220 Infineon Technologies	9,778	-	询价单	数据表	OptiMOS™ 5	TO-220-3 Full Pack	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	6V, 10V	6mOhm @ 56A, 10V	Through Hole	3.3V @ 36µA	36 nC @ 10 V	60 V	±20V	2600 pF @ 30 V	-	-	PG-TO220 Full Pack	-	33W (Tc)	-55°C ~ 175°C (TJ)
IRF7811AVTRPBF MOSFET N-CH 30V 10.8A 8SO Infineon Technologies	6,731	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.8A (Ta)	4.5V	14mOhm @ 15A, 4.5V	Surface Mount	3V @ 250µA	26 nC @ 5 V	30 V	±20V	1801 pF @ 10 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF7233TRPBF MOSFET P-CH 12V 9.5A 8SO Infineon Technologies	4,014	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	9.5A (Ta)	2.5V, 4.5V	20mOhm @ 9.5A, 4.5V	Surface Mount	600mV @ 250µA (Min)	74 nC @ 5 V	12 V	±12V	6000 pF @ 10 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)

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