| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRL3705ZPBFMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
6,093 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | Through Hole | 3V @ 250µA | 60 nC @ 5 V | 55 V | ±16V | 2880 pF @ 25 V | - | - | TO-220AB | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA50R500CEMOSFET N-CH 500V 7.6A TO220-FP Infineon Technologies |
9,926 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | Through Hole | 3.5V @ 200µA | 18.7 nC @ 10 V | 500 V | ±20V | 433 pF @ 100 V | - | - | PG-TO220-3-31 | - | 28W (Tc) | -40°C ~ 150°C (TJ) |
|
IPD50R399CPMOSFET N-CH 500V 9A TO252-3 Infineon Technologies |
8,296 | - |
|
数据表 |
CoolMOS™ CP | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | Surface Mount | 3.5V @ 330µA | 23 nC @ 10 V | 500 V | ±20V | 890 pF @ 100 V | - | - | PG-TO252-3-11 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLR2705TRLMOSFET N-CH 55V 28A DPAK Infineon Technologies |
2,976 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | Surface Mount | 2V @ 250µA | 25 nC @ 5 V | 55 V | ±16V | 880 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR7821TRPBFMOSFET N-CH 30V 65A DPAK Infineon Technologies |
6,001 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | Surface Mount | 1V @ 250µA | 14 nC @ 4.5 V | 30 V | ±20V | 1030 pF @ 15 V | - | - | TO-252AA (DPAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLL3303TRPBFMOSFET N-CH 30V 4.6A SOT223 Infineon Technologies |
8,247 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | Surface Mount | 1V @ 250µA | 50 nC @ 10 V | 30 V | ±16V | 840 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
SPP15P10PMOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
9,977 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | Through Hole | 2.1V @ 1.54mA | 50 nC @ 10 V | 100 V | ±20V | 1180 pF @ 25 V | - | - | PG-TO220-3 | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7468TRMOSFET N-CH 40V 9.4A 8SO Infineon Technologies |
9,432 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | Surface Mount | 2V @ 250µA | 34 nC @ 4.5 V | 40 V | ±12V | 2460 pF @ 20 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFR13N20DTRLMOSFET N-CH 200V 13A DPAK Infineon Technologies |
7,231 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | Surface Mount | 5.5V @ 250µA | 38 nC @ 10 V | 200 V | ±30V | 830 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
BUZ31 E3046MOSFET N-CH 200V 14.5A TO262-3 Infineon Technologies |
5,856 | - |
|
数据表 |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 1120 pF @ 25 V | - | - | PG-TO262-3 | - | 95W (Tc) | -55°C ~ 150°C (TJ) |