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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRL3705ZPBF

IRL3705ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

6,093 -
IRL3705ZPBF

数据表

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V Through Hole 3V @ 250µA 60 nC @ 5 V 55 V ±16V 2880 pF @ 25 V - - TO-220AB - 130W (Tc) -55°C ~ 175°C (TJ)
IPA50R500CE

IPA50R500CE

MOSFET N-CH 500V 7.6A TO220-FP

Infineon Technologies

9,926 -
IPA50R500CE

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 13V 500mOhm @ 2.3A, 13V Through Hole 3.5V @ 200µA 18.7 nC @ 10 V 500 V ±20V 433 pF @ 100 V - - PG-TO220-3-31 - 28W (Tc) -40°C ~ 150°C (TJ)
IPD50R399CP

IPD50R399CP

MOSFET N-CH 500V 9A TO252-3

Infineon Technologies

8,296 -
IPD50R399CP

数据表

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 399mOhm @ 4.9A, 10V Surface Mount 3.5V @ 330µA 23 nC @ 10 V 500 V ±20V 890 pF @ 100 V - - PG-TO252-3-11 - 83W (Tc) -55°C ~ 150°C (TJ)
IRLR2705TRL

IRLR2705TRL

MOSFET N-CH 55V 28A DPAK

Infineon Technologies

2,976 -
IRLR2705TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V Surface Mount 2V @ 250µA 25 nC @ 5 V 55 V ±16V 880 pF @ 25 V - - TO-252AA (DPAK) - 68W (Tc) -55°C ~ 175°C (TJ)
IRLR7821TRPBF

IRLR7821TRPBF

MOSFET N-CH 30V 65A DPAK

Infineon Technologies

6,001 -
IRLR7821TRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V Surface Mount 1V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1030 pF @ 15 V - - TO-252AA (DPAK) - 75W (Tc) -55°C ~ 175°C (TJ)
IRLL3303TRPBF

IRLL3303TRPBF

MOSFET N-CH 30V 4.6A SOT223

Infineon Technologies

8,247 -
IRLL3303TRPBF

数据表

HEXFET® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V Surface Mount 1V @ 250µA 50 nC @ 10 V 30 V ±16V 840 pF @ 25 V - - SOT-223 - 1W (Ta) -55°C ~ 150°C (TJ)
SPP15P10P

SPP15P10P

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies

9,977 -
SPP15P10P

数据表

SIPMOS® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 240mOhm @ 10.6A, 10V Through Hole 2.1V @ 1.54mA 50 nC @ 10 V 100 V ±20V 1180 pF @ 25 V - - PG-TO220-3 - 128W (Tc) -55°C ~ 175°C (TJ)
IRF7468TR

IRF7468TR

MOSFET N-CH 40V 9.4A 8SO

Infineon Technologies

9,432 -
IRF7468TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V Surface Mount 2V @ 250µA 34 nC @ 4.5 V 40 V ±12V 2460 pF @ 20 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFR13N20DTRL

IRFR13N20DTRL

MOSFET N-CH 200V 13A DPAK

Infineon Technologies

7,231 -
IRFR13N20DTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 235mOhm @ 8A, 10V Surface Mount 5.5V @ 250µA 38 nC @ 10 V 200 V ±30V 830 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
BUZ31 E3046

BUZ31 E3046

MOSFET N-CH 200V 14.5A TO262-3

Infineon Technologies

5,856 -
BUZ31 E3046

数据表

SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Tc) 5V 200mOhm @ 9A, 5V Through Hole 4V @ 1mA - 200 V ±20V 1120 pF @ 25 V - - PG-TO262-3 - 95W (Tc) -55°C ~ 150°C (TJ)
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