Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 71

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSZ088N03MSGATMA1 MOSFET N-CH 30V 11A/40A 8TSDSON Infineon Technologies	6,807	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	27 nC @ 10 V	30 V	±20V	2100 pF @ 15 V	-	-	PG-TSDSON-8	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)
IRLHS2242TR2PBF MOSFET P-CH 20V 5.8A 2X2 PQFN Infineon Technologies	3,989	-	询价单	数据表	-	6-PowerVDFN	Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	7.2A (Ta), 15A (Tc)	-	31mOhm @ 8.5A, 4.5V	Surface Mount	1.1V @ 10µA	12 nC @ 10 V	20 V	-	877 pF @ 10 V	-	-	6-PQFN (2x2)	-	-	-
AUIRFR4105ZTRL MOSFET N-CH 55V 20A DPAK Infineon Technologies	6,007	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	24.5mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	27 nC @ 10 V	55 V	±20V	740 pF @ 25 V	-	-	TO-252AA (DPAK)	-	48W (Tc)	-55°C ~ 175°C (TJ)
IRLU3717PBF MOSFET N-CH 20V 120A I-PAK Infineon Technologies	4,428	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	4.5V, 10V	4mOhm @ 15A, 10V	Through Hole	2.45V @ 250µA	31 nC @ 4.5 V	20 V	±20V	2830 pF @ 10 V	-	-	IPAK	-	89W (Tc)	-55°C ~ 175°C (TJ)
IRLI2203NPBF MOSFET N-CH 30V 61A TO220AB FP Infineon Technologies	7,477	-	询价单	数据表	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	4.5V, 10V	7mOhm @ 37A, 10V	Through Hole	1V @ 250µA	110 nC @ 4.5 V	30 V	±16V	3500 pF @ 25 V	-	-	TO-220AB Full-Pak	-	47W (Tc)	-55°C ~ 175°C (TJ)
IAUCN08S7N024ATMA1 MOSFET_(75V 120V( Infineon Technologies	1,990	-	询价单	数据表	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	165A	10V	-	Surface Mount	-	16 nC @ 10 V	80 V	-	-	AEC-Q101	-	PG-TDSON-8-34	Automotive	-	-55°C ~ 175°C
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies	448	-	询价单	数据表	OptiMOS™ 7	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Ta), 330A (Tj)	7V, 10V	0.72mOhm @ 100A, 10V	Surface Mount	3V @ 73µA	94 nC @ 10 V	40 V	±20V	6460 pF @ 20 V	AEC-Q101	-	PG-HSOF-5-2	Automotive	149W (Tc)	-55°C ~ 175°C (TJ)
IPD65R660CFDATMA2 MOSFET N-CH 700V 6A TO252-3-313 Infineon Technologies	1,607	-	询价单	数据表	CoolMOS™ CFD2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	660mOhm @ 2.1A, 10V	Surface Mount	4.5V @ 200µA	22 nC @ 10 V	700 V	±20V	615 pF @ 100 V	-	-	PG-TO252-3-313	-	63W (Tc)	-55°C ~ 150°C (TJ)
IPD85P04P4L06ATMA2 MOSFET P-CH 40V 85A TO252-3 Infineon Technologies	3,644	-	询价单	数据表	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	85A (Tc)	4.5V, 10V	6.4mOhm @ 85A, 10V	Surface Mount	2.2V @ 150µA	104 nC @ 10 V	40 V	+5V, -16V	6580 pF @ 25 V	-	-	PG-TO252-3-313	-	88W (Tc)	-55°C ~ 175°C (TJ)
IPD50R399CPATMA1 LOW POWER_LEGACY Infineon Technologies	2,500	-	询价单	数据表	CoolMOS™ CP	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	399mOhm @ 4.9A, 10V	Surface Mount	3.5V @ 330µA	23 nC @ 10 V	500 V	±20V	890 pF @ 100 V	-	-	PG-TO252-3-313	-	83W (Tc)	-55°C ~ 150°C (TJ)

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