Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 70

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF7606TR MOSFET P-CH 30V 3.6A MICRO8 Infineon Technologies	5,146	-	询价单	数据表	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.6A (Ta)	4.5V, 10V	90mOhm @ 2.4A, 10V	Surface Mount	1V @ 250µA	30 nC @ 10 V	30 V	±20V	520 pF @ 25 V	-	-	Micro8™	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IRLR7807ZTRPBF MOSFET N-CH 30V 43A DPAK Infineon Technologies	9,928	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	Surface Mount	2.25V @ 250µA	11 nC @ 4.5 V	30 V	±20V	780 pF @ 15 V	-	-	TO-252AA (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
IRF7353D1TRPBF MOSFET N-CH 30V 6.5A 8SO Infineon Technologies	4,021	-	询价单	数据表	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.5A (Ta)	4.5V, 10V	32mOhm @ 5.8A, 10V	Surface Mount	1V @ 250µA	33 nC @ 10 V	30 V	±20V	650 pF @ 25 V	-	Schottky Diode (Isolated)	8-SO	-	2W (Ta)	-55°C ~ 150°C (TJ)
IRF7807VTRPBF MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	4,319	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	3V @ 250µA	14 nC @ 5 V	30 V	±20V	-	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
ISZ173N15NM6ATMA1 TRENCH >=100V Infineon Technologies	4,965	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7.9A (Ta), 48A (Tc)	8V, 15V	16.3mOhm @ 16A, 15V	Surface Mount	4V @ 35µA	19.2 nC @ 10 V	150 V	±20V	1300 pF @ 75 V	-	-	PG-TSDSON-8 FL	-	2.5W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies	2,310	-	询价单	数据表	OptiMOS™ 7	5-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta), 290A (Tj)	7V, 10V	0.82mOhm @ 90A, 10V	Surface Mount	3V @ 60µA	78 nC @ 10 V	40 V	±20V	5410 pF @ 20 V	AEC-Q101	-	PG-HSOF-5-2	Automotive	133W (Tc)	-55°C ~ 175°C (TJ)
IRFR2607ZTRPBF MOSFET N-CH 75V 42A DPAK Infineon Technologies	5,931	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	-	22mOhm @ 30A, 10V	Surface Mount	4V @ 50µA	51 nC @ 10 V	75 V	-	1440 pF @ 25 V	-	-	PG-TO252-3-901\|DPAK	-	-	-
IPD90N06S4L05ATMA2 MOSFET N-CH 60V 90A TO252-31 Infineon Technologies	2,256	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	4.6mOhm @ 90A, 10V	Surface Mount	2.2V @ 60µA	110 nC @ 10 V	60 V	±16V	8180 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	107W (Tc)	-55°C ~ 175°C (TJ)
IRF7402TRPBF MOSFET N-CH 20V 6.8A 8SO Infineon Technologies	7,535	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.8A (Ta)	2.7V, 4.5V	35mOhm @ 4.1A, 4.5V	Surface Mount	700mV @ 250µA (Min)	22 nC @ 4.5 V	20 V	±12V	650 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SI4410DYTRPBF MOSFET N-CH 30V 10A 8SO Infineon Technologies	6,720	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	13.5mOhm @ 10A, 10V	Surface Mount	1V @ 250µA	45 nC @ 10 V	30 V	±20V	1585 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)

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