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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPU07N60S5MOSFET N-CH 600V 7.3A TO251-3 Infineon Technologies |
4,778 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Through Hole | 5.5V @ 350µA | 35 nC @ 10 V | 600 V | ±20V | 970 pF @ 25 V | - | - | PG-TO251-3-21 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRL7833PBFMOSFET N-CH 30V 150A TO220AB Infineon Technologies |
3,486 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | Through Hole | 2.3V @ 250µA | 47 nC @ 4.5 V | 30 V | ±20V | 4170 pF @ 15 V | - | - | TO-220AB | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR2905CPBFMOSFET N-CH 55V 36A DPAK Infineon Technologies |
2,155 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Ta) | - | - | Surface Mount | - | - | 55 V | - | - | - | - | TO-252AA (DPAK) | - | - | - |
|
IPP126N10N3GXKSA1MOSFET N-CH 100V 58A TO220-3 Infineon Technologies |
7,050 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 6V, 10V | 12.3mOhm @ 46A, 10V | Through Hole | 3.5V @ 46µA | 35 nC @ 10 V | 100 V | ±20V | 2500 pF @ 50 V | - | - | PG-TO220-3 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB12CNE8N GMOSFET N-CH 85V 67A D2PAK Infineon Technologies |
6,339 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | Surface Mount | 4V @ 83µA | 64 nC @ 10 V | 85 V | ±20V | 4340 pF @ 40 V | - | - | PG-TO263-3 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
BSB019N03LX GMOSFET N-CH 30V 32A/174A 2WDSON Infineon Technologies |
8,548 | - |
|
数据表 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 32A (Ta), 174A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 92 nC @ 10 V | 30 V | ±20V | 8400 pF @ 15 V | - | - | MG-WDSON-2, CanPAK M™ | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF7704MOSFET P-CH 40V 4.6A 8TSSOP Infineon Technologies |
5,721 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | Surface Mount | 3V @ 250µA | 38 nC @ 4.5 V | 40 V | ±20V | 3150 pF @ 25 V | - | - | 8-TSSOP | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7526D1TRMOSFET P-CH 30V 2A MICRO8 Infineon Technologies |
6,714 | - |
|
数据表 |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | Surface Mount | 1V @ 250µA | 11 nC @ 10 V | 30 V | ±20V | 180 pF @ 25 V | - | Schottky Diode (Isolated) | Micro8™ | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFR4105ZTRLMOSFET N-CH 55V 30A DPAK Infineon Technologies |
6,065 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | Surface Mount | 4V @ 250µA | 27 nC @ 10 V | 55 V | ±20V | 740 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR4105ZTRRMOSFET N-CH 55V 30A DPAK Infineon Technologies |
8,185 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | Surface Mount | 4V @ 250µA | 27 nC @ 10 V | 55 V | ±20V | 740 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
