Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 68

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFH7936TRPBF MOSFET N-CH 30V 20A/54A 8PQFN Infineon Technologies	9,218	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta), 54A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	Surface Mount	2.35V @ 50µA	26 nC @ 4.5 V	30 V	±20V	2360 pF @ 15 V	-	-	8-PQFN (5x6)	-	3.1W (Ta)	-55°C ~ 150°C (TJ)
IRLH6224TRPBF MOSFET N-CH 20V 28A/105A 8PQFN Infineon Technologies	3,915	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 105A (Tc)	2.5V, 4.5V	3mOhm @ 20A, 4.5V	Surface Mount	1.1V @ 50µA	86 nC @ 10 V	20 V	±12V	3710 pF @ 10 V	-	-	8-PQFN (5x6)	-	3.6W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
BSC019N04LSTATMA1 MOSFET N-CH 40V Infineon Technologies	5,000	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 161A (Tc)	4.5V, 10V	1.9mOhm @ 50A, 10V	-	2V @ 250µA	57 nC @ 10 V	40 V	±20V	4060 pF @ 20 V	-	-	-	-	94W (Tc)	-55°C ~ 175°C (TA)
IRFR9014N MOSFET P-CH 60V 5.1A DPAK Infineon Technologies	7,037	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	Surface Mount	4V @ 250µA	12 nC @ 10 V	60 V	±20V	270 pF @ 25 V	-	-	TO-252AA (DPAK)	-	2.5W (Ta), 25W (Tc)	-
SPD06N60C3ATMA1 MOSFET N-CH 600V 6.2A TO252-3 Infineon Technologies	5,186	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	6.2A (Tc)	10V	750mOhm @ 3.9A, 10V	Surface Mount	3.9V @ 260µA	31 nC @ 10 V	600 V	±20V	620 pF @ 25 V	-	-	PG-TO252-3	-	74W (Tc)	-55°C ~ 150°C (TJ)
IRF5803D2TR MOSFET P-CH 40V 3.4A 8SO Infineon Technologies	9,202	-	询价单	数据表	FETKY™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.4A (Ta)	4.5V, 10V	112mOhm @ 3.4A, 10V	Surface Mount	3V @ 250µA	37 nC @ 10 V	40 V	±20V	1110 pF @ 25 V	-	Schottky Diode (Isolated)	8-SO	-	2W (Ta)	-55°C ~ 150°C (TJ)
AUIRFR3504TRL MOSFET N-CH 40V 56A DPAK Infineon Technologies	6,167	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	10V	9.2mOhm @ 30A, 10V	Surface Mount	4V @ 250µA	71 nC @ 10 V	40 V	±20V	2150 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRLR3715TR MOSFET N-CH 20V 54A DPAK Infineon Technologies	9,706	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	14mOhm @ 26A, 10V	Surface Mount	3V @ 250µA	17 nC @ 4.5 V	20 V	±20V	1060 pF @ 10 V	-	-	TO-252AA (DPAK)	-	3.8W (Ta), 71W (Tc)	-55°C ~ 175°C (TJ)
BSP171PL6327HTSA1 MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies	3,729	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	4.5V, 10V	300mOhm @ 1.9A, 10V	Surface Mount	2V @ 460µA	20 nC @ 10 V	60 V	±20V	460 pF @ 25 V	-	-	PG-SOT223-4-21	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
BSC889N03MSGATMA1 MOSFET N-CH 30V 12A 44A TDSON Infineon Technologies	8,430	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta) 44A (Tc)	4.5V, 10V	9.1mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	20 nC @ 10 V	30 V	±20V	1500 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)

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