Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 67

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFZ44VZSTRRPBF MOSFET N-CH 60V 57A D2PAK Infineon Technologies	7,316	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	12mOhm @ 34A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	60 V	±20V	1690 pF @ 25 V	-	-	D2PAK	-	92W (Tc)	-55°C ~ 175°C (TJ)
IAUC100N08S5N034ATMA1 MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies	7,867	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	132A (Tj)	6V, 10V	3.4mOhm @ 50A, 10V	Surface Mount	3.8V @ 78µA	66 nC @ 10 V	80 V	±20V	4559 pF @ 40 V	-	-	PG-TDSON-8-34	-	136W (Tc)	-55°C ~ 175°C (TJ)
IRLR4343TR MOSFET N-CH 55V 26A DPAK Infineon Technologies	6,330	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	50mOhm @ 4.7A, 10V	Surface Mount	1V @ 250µA	42 nC @ 10 V	55 V	±20V	740 pF @ 50 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-40°C ~ 175°C (TJ)
IRF7413TRPBF MOSFET N-CH 30V 13A 8SO Infineon Technologies	4,104	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	11mOhm @ 7.3A, 10V	Surface Mount	3V @ 250µA	79 nC @ 10 V	30 V	±20V	1800 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
SPD01N60C3BTMA1 MOSFET N-CH 650V 800MA TO252-3 Infineon Technologies	7,344	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	800mA (Tc)	10V	6Ohm @ 500mA, 10V	Surface Mount	3.9V @ 250µA	5 nC @ 10 V	650 V	±20V	100 pF @ 25 V	-	-	PG-TO252-3-11	-	11W (Tc)	-55°C ~ 150°C (TJ)
BSC050N03MSGATMA1 MOSFET N-CH 30V 16A/80A TDSON Infineon Technologies	4,611	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 80A (Tc)	4.5V, 10V	5mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	46 nC @ 10 V	30 V	±20V	3600 pF @ 15 V	-	-	PG-TDSON-8-5	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
IRLR8721TRPBF MOSFET N-CH 30V 65A DPAK Infineon Technologies	3,518	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	4.5V, 10V	8.4mOhm @ 25A, 10V	Surface Mount	2.35V @ 25µA	13 nC @ 4.5 V	30 V	±20V	1030 pF @ 15 V	-	-	TO-252AA (DPAK)	-	65W (Tc)	-55°C ~ 175°C (TJ)
IRFH7921TRPBF MOSFET N-CH 30V 15A/34A PQFN Infineon Technologies	5,580	-	询价单	数据表	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 34A (Tc)	4.5V, 10V	8.5mOhm @ 15A, 10V	Surface Mount	2.35V @ 25µA	14 nC @ 4.5 V	30 V	±20V	1210 pF @ 15 V	-	-	PQFN (5x6) Single Die	-	3.1W (Ta)	-55°C ~ 150°C (TJ)
BSC889N03LSGATMA1 MOSFET N-CH 30V 13A/45A TDSON Infineon Technologies	9,984	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 45A (Tc)	4.5V, 10V	9mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	16 nC @ 10 V	30 V	±20V	1300 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)
IRFH5303TR2PBF MOSFET N-CH 30V 23A/82A 8PQFN Infineon Technologies	8,524	-	询价单	数据表	HEXFET®	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	23A (Ta), 82A (Tc)	4.5V, 10V	4.2mOhm @ 49A, 10V	Surface Mount	2.35V @ 50µA	41 nC @ 10 V	30 V	±20V	2190 pF @ 15 V	-	-	8-PQFN (5x6)	-	3.6W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)

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