Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 66

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
ISZ330N12LM6ATMA1 OPTIMOS 6 POWER-TRANSISTOR,120V Infineon Technologies	3,719	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.7A (Ta), 24A (Tc)	3.3V, 10V	33mOhm @ 9A, 10V	Surface Mount	2.2V @ 11µA	10.1 nC @ 10 V	120 V	±20V	650 pF @ 60 V	-	-	PG-TSDSON-8 FL	-	2.5W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IPU80R900P7AKMA1 MOSFET N-CH 800V 6A TO251-3 Infineon Technologies	1,435	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	900mOhm @ 2.2A, 10V	Through Hole	3.5V @ 110µA	15 nC @ 10 V	800 V	±20V	350 pF @ 500 V	-	-	PG-TO251-3	-	45W (Tc)	-55°C ~ 150°C (TJ)
IRF7726 MOSFET P-CH 30V 7A MICRO8 Infineon Technologies	7,912	-	询价单	数据表	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	26mOhm @ 7A, 10V	Surface Mount	2.5V @ 250µA	69 nC @ 10 V	30 V	±20V	2204 pF @ 25 V	-	-	Micro8™	-	1.79W (Ta)	-55°C ~ 150°C (TJ)
IPB04N03LA MOSFET N-CH 25V 80A TO263-3 Infineon Technologies	2,118	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	3.9mOhm @ 55A, 10V	Surface Mount	2V @ 60µA	32 nC @ 5 V	25 V	±20V	3877 pF @ 15 V	-	-	PG-TO263-3-2	-	107W (Tc)	-55°C ~ 175°C (TJ)
SPP77N06S2-12 MOSFET N-CH 55V 80A TO220-3 Infineon Technologies	5,593	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	12mOhm @ 38A, 10V	Through Hole	4V @ 93µA	60 nC @ 10 V	55 V	±20V	2350 pF @ 25 V	-	-	PG-TO220-3-1	-	158W (Tc)	-55°C ~ 175°C (TJ)
SPP80N06S2L-11 MOSFET N-CH 55V 80A TO220-3 Infineon Technologies	3,612	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	11mOhm @ 40A, 10V	Through Hole	2V @ 93µA	80 nC @ 10 V	55 V	±20V	2650 pF @ 25 V	-	-	PG-TO220-3-1	-	158W (Tc)	-55°C ~ 175°C (TJ)
IPD85P04P4L06ATMA1 MOSFET P-CH 40V 85A TO252-3 Infineon Technologies	7,283	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	85A (Tc)	4.5V, 10V	6.4mOhm @ 85A, 10V	Surface Mount	2.2V @ 150µA	104 nC @ 10 V	40 V	±16V	6580 pF @ 25 V	AEC-Q101	-	PG-TO252-3-313	Automotive	88W (Tc)	-55°C ~ 175°C (TJ)
IRFU5505 MOSFET P-CH 55V 18A IPAK Infineon Technologies	9,328	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Through Hole	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	IPAK (TO-251AA)	-	57W (Tc)	-55°C ~ 150°C (TJ)
IPB70N04S406ATMA1 MOSFET N-CH 40V 70A TO263-3 Infineon Technologies	1,816	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	6.2mOhm @ 70A, 10V	Surface Mount	4V @ 26µA	32 nC @ 10 V	40 V	±20V	2550 pF @ 25 V	-	-	PG-TO263-3-2	-	58W (Tc)	-55°C ~ 175°C (TJ)
IAUC120N06S5N032ATMA1 MOSFET_)40V 60V) Infineon Technologies	6,947	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tj)	7V, 10V	3.23mOhm @ 60A, 10V	Surface Mount	3.4V @ 44µA	47 nC @ 10 V	60 V	±20V	3446 pF @ 30 V	-	-	PG-TDSON-8-34	-	94W (Tc)	-55°C ~ 175°C (TJ)

共 6460 条记录«上一页 1... 62 63 64 656667 68 69...646 下一页»