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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLR2905PBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
8,097 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | Surface Mount | 2V @ 250µA | 48 nC @ 5 V | 55 V | ±16V | 1700 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
IPB114N03L GMOSFET N-CH 30V 30A D2PAK Infineon Technologies |
2,606 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 1500 pF @ 15 V | - | - | PG-TO263-3 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
SPU11N10MOSFET N-CH 100V 10.5A TO251-3 Infineon Technologies |
2,741 | - |
|
数据表 |
SIPMOS® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.5A (Tc) | 10V | 170mOhm @ 7.8A, 10V | Through Hole | 4V @ 21µA | 18.3 nC @ 10 V | 100 V | ±20V | 400 pF @ 25 V | - | - | P-TO251-3-1 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
IAUA120N04S5N014AUMA1MOSFET_(20V 40V) PG-HSOF-5 Infineon Technologies |
3,965 | - |
|
数据表 |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 7V, 10V | 1.4mOhm @ 60A, 10V | Surface Mount | 3.4V @ 60µA | 82 nC @ 10 V | 40 V | ±20V | 4828 pF @ 25 V | - | - | PG-HSOF-5-2 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPB100N04S4H2ATMA1MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
4,996 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 2.4mOhm @ 100A, 10V | Surface Mount | 4V @ 70µA | 90 nC @ 10 V | 40 V | ±20V | 7180 pF @ 25 V | - | - | PG-TO263-3-2 | - | 115W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7233TRMOSFET P-CH 12V 9.5A 8SO Infineon Technologies |
6,760 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 74 nC @ 5 V | 12 V | ±12V | 6000 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7220GTRPBFMOSFET P-CH 14V 11A 8SO Infineon Technologies |
6,706 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 125 nC @ 5 V | 14 V | ±12V | 8075 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
AUIRF2804L-313TRLMOSFET N-CH 40V 195A TO262 Infineon Technologies |
5,284 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 6450 pF @ 25 V | AEC-Q101 | - | TO-262-3 | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUXYBFP3306MOSFET N-CH 60V TO-247AC Infineon Technologies |
2,747 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AUIRFSL4010-313TRLMOSFET N-CH 100V 180A TO262 Infineon Technologies |
3,882 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | Through Hole | 4V @ 250µA | 215 nC @ 10 V | 100 V | ±8V | 9575 pF @ 50 V | AEC-Q101 | - | TO-262-3 | Automotive | 375W (Tc) | -55°C ~ 175°C (TJ) |
