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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFC140NBMOSFET 100V 33A DIE Infineon Technologies |
3,343 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 33A | 10V | 44mOhm @ 33A, 10V | Surface Mount | - | - | 100 V | - | - | - | - | Die | - | - | - |
|
IRF7811AVTRPBF-1MOSFET N-CH 30V 10.8A 8SO Infineon Technologies |
2,086 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10.8A (Ta) | 4.5V | 14mOhm @ 15A, 4.5V | Surface Mount | 3V @ 250µA | 26 nC @ 5 V | 30 V | ±20V | 1801 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFC4905BMOSFET 55V 42A DIE Infineon Technologies |
6,402 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 42A | 10V | 20mOhm @ 42A, 10V | Surface Mount | - | - | 55 V | - | - | - | - | Die | - | - | - |
|
|
IRFC3710DMOSFET 100V 57A DIE Infineon Technologies |
7,752 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 57A | 10V | 23mOhm @ 57A, 10V | Surface Mount | - | - | 100 V | - | - | - | - | Die | - | - | - |
|
|
IRFC230NBMOSFET 200V 9.3A DIE Infineon Technologies |
9,555 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 9.3A | - | 300mOhm @ 9.3A, 10V | Surface Mount | - | - | 200 V | - | - | - | - | Die | - | - | - |
|
|
IRFCZ44VBMOSFET 60V 55A DIE Infineon Technologies |
6,518 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 55A | 10V | 16.5mOhm @ 55A, 10V | Surface Mount | - | - | 60 V | - | - | - | - | Die | - | - | - |
|
|
IRFC260NBMOSFET 200V 50A DIE Infineon Technologies |
9,926 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 50A | 10V | 40mOhm @ 50A, 10V | Surface Mount | - | - | 200 V | - | - | - | - | Die | - | - | - |
|
IRF6216TRPBF-1MOSFET P-CH 150V 2.2A SOT223 Infineon Technologies |
4,078 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.2A (Ta) | 10V | 240mOhm @ 1.3A, 10V | Surface Mount | 5V @ 250µA | 49 nC @ 10 V | 150 V | ±20V | 1280 pF @ 25 V | - | - | SOT-223 | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFB7734PBFMOSFET N-CH 75V 183A TO220AB Infineon Technologies |
6,364 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | Through Hole | 3.7V @ 250µA | 270 nC @ 10 V | 75 V | ±20V | 10150 pF @ 25 V | - | - | TO-220AB | - | 290W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP147N03L GMOSFET N-CH 30V 20A TO220-3 Infineon Technologies |
6,555 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | Through Hole | 2.2V @ 250µA | 10 nC @ 10 V | 30 V | ±20V | 1000 pF @ 15 V | - | - | PG-TO220-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
