Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 65

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRLR7807ZTR MOSFET N-CH 30V 43A DPAK Infineon Technologies	2,464	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	43A (Tc)	4.5V, 10V	13.8mOhm @ 15A, 10V	Surface Mount	2.25V @ 250µA	11 nC @ 4.5 V	30 V	±20V	780 pF @ 15 V	-	-	TO-252AA (DPAK)	-	40W (Tc)	-55°C ~ 175°C (TJ)
SPB21N10 G MOSFET N-CH 100V 21A TO263-3 Infineon Technologies	5,290	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	80mOhm @ 15A, 10V	Surface Mount	4V @ 44µA	38.4 nC @ 10 V	100 V	±20V	865 pF @ 25 V	-	-	PG-TO263-3-2	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRFR4105TR MOSFET N-CH 55V 27A DPAK Infineon Technologies	9,107	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	45mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-252AA (DPAK)	-	68W (Tc)	-55°C ~ 155°C (TJ)
IRFR5305TRL MOSFET P-CH 55V 31A DPAK Infineon Technologies	3,421	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	31A (Tc)	10V	65mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	63 nC @ 10 V	55 V	±20V	1200 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IPD90N06S4L06ATMA2 MOSFET N-CH 60V 90A TO252-31 Infineon Technologies	3,357	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	4.5V, 10V	6.3mOhm @ 90A, 10V	Surface Mount	2.2V @ 40µA	75 nC @ 10 V	60 V	±16V	5680 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	79W (Tc)	-55°C ~ 175°C (TJ)
IRF3707ZCSTRRP MOSFET N-CH 30V 59A D2PAK Infineon Technologies	9,862	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	4.5V, 10V	9.5mOhm @ 21A, 10V	Surface Mount	2.25V @ 25µA	15 nC @ 4.5 V	30 V	±20V	1210 pF @ 15 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
BUZ32 MOSFET N-CH 200V 9.5A TO220-3 Infineon Technologies	7,106	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V	400mOhm @ 6A, 10V	Through Hole	4V @ 1mA	-	200 V	±20V	530 pF @ 25 V	-	-	PG-TO220-3	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF7807 MOSFET N-CH 30V 8.3A 8SO Infineon Technologies	6,251	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V	25mOhm @ 7A, 4.5V	Surface Mount	1V @ 250µA	17 nC @ 5 V	30 V	±12V	-	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
BSZ0704LSATMA1 MOSFET N-CH 60V 11A/40A TSDSON Infineon Technologies	7,184	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	4.5V, 10V	9.9mOhm @ 20A, 10V	Surface Mount	2.3V @ 14µA	8.6 nC @ 4.5 V	60 V	±20V	1300 pF @ 30 V	-	-	PG-TDSON-8 FL	-	2.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)
BSC0704LSATMA1 MOSFET N-CH 60V 11A/47A TDSON Infineon Technologies	5,280	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 47A (Tc)	4.5V, 10V	9.4mOhm @ 24A, 10V	Surface Mount	2.3V @ 14µA	9.4 nC @ 4.5 V	60 V	±20V	1300 pF @ 30 V	-	-	PG-TDSON-8-6	-	2.1W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)

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