Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 64

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IAUZ40N10S5L120ATMA1 MOSFET_(75V 120V( PG-TSDSON-8 Infineon Technologies	4,228	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	46A (Tj)	4.5V, 10V	12mOhm @ 20A, 10V	Surface Mount	2.2V @ 27µA	22.6 nC @ 10 V	100 V	±20V	1589 pF @ 50 V	-	-	PG-TSDSON-8-33	-	62W (Tc)	-55°C ~ 175°C (TJ)
IRLU3715 MOSFET N-CH 20V 54A I-PAK Infineon Technologies	4,348	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	54A (Tc)	4.5V, 10V	14mOhm @ 26A, 10V	Through Hole	3V @ 250µA	17 nC @ 4.5 V	20 V	±20V	1060 pF @ 10 V	-	-	IPAK	-	3.8W (Ta), 71W (Tc)	-55°C ~ 175°C (TJ)
BSP372L6327HTSA1 MOSFET N-CH 100V 1.7A SOT223-4 Infineon Technologies	7,366	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.7A (Ta)	5V	310mOhm @ 1.7A, 5V	Surface Mount	2V @ 1mA	-	100 V	±14V	520 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IPD220N06L3GBTMA1 MOSFET N-CH 60V 30A TO252-3 Infineon Technologies	7,785	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	22mOhm @ 30A, 10V	Surface Mount	2.2V @ 11µA	10 nC @ 4.5 V	60 V	±20V	1600 pF @ 30 V	-	-	PG-TO252-3	-	36W (Tc)	-55°C ~ 175°C (TJ)
IPD65R950CFDATMA2 MOSFET N-CH 650V 3.9A TO252-3 Infineon Technologies	2,430	-	询价单	数据表	CoolMOS™ CFD2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	950mOhm @ 1.5A, 10V	Surface Mount	4.5V @ 200µA	14.1 nC @ 10 V	650 V	±20V	380 pF @ 100 V	-	-	PG-TO252-3	-	36.7W (Tc)	-55°C ~ 150°C (TJ)
IRFR5505 MOSFET P-CH 55V 18A DPAK Infineon Technologies	7,554	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
IPAN65R650CEXKSA1 MOSFET N-CH 650V 10.1A TO220 Infineon Technologies	462	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	10.1A (Tc)	10V	650mOhm @ 2.1A, 10V	Through Hole	3.5V @ 210µA	23 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TO220-FP	-	28W (Tc)	-40°C ~ 150°C (TJ)
IRF7426TR MOSFET N-CH 20V 8SO Infineon Technologies	8,143	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	-	-	Surface Mount	-	-	20 V	-	-	-	-	8-SO	-	-	-
SPB21N10T MOSFET N-CH 100V 21A TO263-3 Infineon Technologies	9,144	-	询价单	数据表	SIPMOS®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	80mOhm @ 15A, 10V	Surface Mount	4V @ 44µA	38.4 nC @ 10 V	100 V	±20V	865 pF @ 25 V	-	-	PG-TO263-3-2	-	90W (Tc)	-55°C ~ 175°C (TJ)
IAUC64N08S5L075ATMA1 MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies	3,580	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tj)	4.5V, 10V	7.5mOhm @ 32A, 10V	Surface Mount	2V @ 30µA	37 nC @ 10 V	80 V	±20V	2106 pF @ 40 V	-	-	PG-TDSON-8-33	-	75W (Tc)	-55°C ~ 175°C (TJ)

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