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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFZ48VSTRLPBFMOSFET N-CH 60V 72A D2PAK Infineon Technologies |
6,232 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 72A (Tc) | 10V | 12mOhm @ 43A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±20V | 1985 pF @ 25 V | - | - | D2PAK | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUZ31 E3045AMOSFET N-CH 200V 14.5A D2PAK Infineon Technologies |
9,617 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14.5A (Tc) | 10V | 200mOhm @ 9A, 5V | Surface Mount | 4V @ 1mA | - | 200 V | ±20V | 1120 pF @ 25 V | - | - | PG-TO263-3 | - | 95W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP023N03LF2SAKSA1MOSFET N-CH 30V 75A TO220AB Infineon Technologies |
1,000 | - |
|
数据表 |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta), 121A (Tc) | 4.5V, 10V | 2.35mOhm @ 70A, 10V | Through Hole | 2.35V @ 60µA | 75 nC @ 10 V | 30 V | ±20V | 3400 pF @ 15 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP083N10N5XKSA1TRENCH >=100V Infineon Technologies |
447 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 73A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | Through Hole | 3.8V @ 49µA | 37 nC @ 10 V | 100 V | ±20V | 2730 pF @ 50 V | - | - | PG-TO220-3-1 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
BSP170PL6327HTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
6,322 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 60 V | ±20V | 410 pF @ 25 V | - | - | PG-SOT223-4-21 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF9332TRPBFMOSFET P-CH 30V 9.8A 8SO Infineon Technologies |
2,918 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | Surface Mount | 2.4V @ 25µA | 41 nC @ 10 V | 30 V | ±20V | 1270 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7420TRMOSFET P-CH 12V 11.5A 8SO Infineon Technologies |
9,889 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | Surface Mount | 900mV @ 250µA | 38 nC @ 4.5 V | 12 V | ±8V | 3529 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IAUCN08S7N034ATMA1MOSFET_(75V 120V( Infineon Technologies |
4,814 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A | 10V | - | Surface Mount | - | 10.5 nC @ 10 V | 80 V | - | - | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7N006ATMA1MOSFET_(20V 40V) Infineon Technologies |
835 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 175A | 10V | - | Surface Mount | - | 107 nC @ 10 V | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-43 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7L006ATMA1MOSFET_(20V 40V) Infineon Technologies |
700 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | - | Surface Mount | - | 124 nC @ 10 V | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-43 | Automotive | - | -55°C ~ 175°C |
