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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLU3714MOSFET N-CH 20V 36A I-PAK Infineon Technologies |
7,422 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | Through Hole | 3V @ 250µA | 9.7 nC @ 4.5 V | 20 V | ±20V | 670 pF @ 10 V | - | - | IPAK | - | 47W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB77N06S2-12MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
4,346 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 12mOhm @ 38A, 10V | Surface Mount | 4V @ 93µA | 60 nC @ 10 V | 55 V | ±20V | 2350 pF @ 25 V | - | - | PG-TO263-3-2 | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD400N06NGBTMA1MOSFET N-CH 60V 27A TO252-3 Infineon Technologies |
2,092 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 40mOhm @ 27A, 10V | Surface Mount | 4V @ 28µA | 17 nC @ 10 V | 60 V | ±20V | 650 pF @ 30 V | - | - | PG-TO252-3 | - | 68W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLHS6242TR2PBFMOSFET N-CH 20V 10A PQFN Infineon Technologies |
2,772 | - |
|
数据表 |
- | 6-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Ta), 12A (Tc) | - | 11.7mOhm @ 8.5A, 4.5V | Surface Mount | 1.1V @ 10µA | 14 nC @ 4.5 V | 20 V | - | 1110 pF @ 10 V | - | - | 6-PQFN (2x2) | - | - | - |
|
|
IRLHS6342TR2PBFMOSFET N-CH 30V 8.7A PQFN Infineon Technologies |
3,246 | - |
|
数据表 |
- | 6-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.7A (Ta), 19A (Tc) | - | 15.5mOhm @ 8.5A, 4.5V | Surface Mount | 1.1V @ 10µA | 11 nC @ 4.5 V | 30 V | - | 1019 pF @ 25 V | - | - | 6-PQFN (2x2) | - | - | - |
|
IPP048N04NGXKSA1MOSFET N-CH 40V 70A TO220-3 Infineon Technologies |
5,913 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 4.8mOhm @ 70A, 10V | Through Hole | 4V @ 200µA | 41 nC @ 10 V | 40 V | ±20V | 3300 pF @ 25 V | - | - | PG-TO220-3 | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
SPD100N03S2L04TMOSFET N-CH 30V 100A TO252-5 Infineon Technologies |
5,406 | - |
|
数据表 |
OptiMOS™ | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | Surface Mount | 2V @ 100µA | 89.7 nC @ 10 V | 30 V | ±20V | 3320 pF @ 25 V | - | - | PG-TO252-5-1 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD90P04P405AUMA1MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
3,920 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | 10V | - | - | - | - | - | ±20V | - | - | - | - | - | - | - |
|
|
IPD06P002NATMA1MOSFET P-CH 60V 35A TO252-3 Infineon Technologies |
8,947 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | Surface Mount | 4V @ 1.7mA | 63 nC @ 10 V | 60 V | ±20V | 2500 pF @ 30 V | - | - | PG-TO252-3 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLR4343TRRMOSFET N-CH 55V 26A DPAK Infineon Technologies |
8,314 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | Surface Mount | 1V @ 250µA | 42 nC @ 10 V | 55 V | ±20V | 740 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -40°C ~ 175°C (TJ) |
