Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 61

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPAW60R280P7SXKSA1 MOSFET N-CH 600V 12A TO220 Infineon Technologies	6,563	-	询价单	数据表	CoolMOS™ P7	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	280mOhm @ 3.8A, 10V	Through Hole	4V @ 190µA	18 nC @ 10 V	600 V	±20V	761 pF @ 400 V	-	-	PG-TO220-FP	-	24W (Tc)	-40°C ~ 150°C (TJ)
AUIRFR2407 MOSFET N-CH 75V 42A DPAK Infineon Technologies	7,930	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	26mOhm @ 25A, 10V	Surface Mount	4V @ 250µA	110 nC @ 10 V	75 V	±20V	2400 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
BSC037N025S G MOSFET N-CH 25V 21A/100A TDSON Infineon Technologies	8,167	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 100A (Tc)	4.5V, 10V	3.7mOhm @ 50A, 10V	Surface Mount	2V @ 50µA	29 nC @ 5 V	25 V	±20V	3660 pF @ 15 V	-	-	PG-TDSON-8-1	-	2.8W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)
BSZ165N04NSGATMA1 MOSFET N-CH 40V 8.9A/31A TSDSON Infineon Technologies	7,543	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.9A (Ta), 31A (Tc)	10V	16.5mOhm @ 20A, 10V	Surface Mount	4V @ 10µA	10 nC @ 10 V	40 V	±20V	840 pF @ 20 V	-	-	PG-TSDSON-8	-	2.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
BSS139H6906XTSA1 MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies	9,494	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	100mA (Ta)	0V, 10V	14Ohm @ 100mA, 10V	Surface Mount	1V @ 56µA	3.5 nC @ 5 V	250 V	±20V	76 pF @ 25 V	-	-	PG-SOT23-3-5	-	360mW (Ta)	-55°C ~ 150°C (TJ)
IRFR4105TRL MOSFET N-CH 55V 27A DPAK Infineon Technologies	8,502	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	45mOhm @ 16A, 10V	Surface Mount	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-252AA (DPAK)	-	68W (Tc)	-55°C ~ 175°C (TJ)
IRF7413ZTR MOSFET N-CH 30V 13A 8SO Infineon Technologies	5,259	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	10mOhm @ 13A, 10V	Surface Mount	2.25V @ 250µA	14 nC @ 4.5 V	30 V	±20V	1210 pF @ 15 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IPP011N03LF2SAKSA1 TRENCH <= 40V Infineon Technologies	944	-	询价单	数据表	StrongIRFET™2	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	46A (Ta), 210A (Tc)	4.5V, 10V	1.05mOhm @ 100A, 10V	Through Hole	2.35V @ 250µA	336 nC @ 10 V	30 V	±20V	15100 pF @ 15 V	-	-	PG-TO220-3-U05	-	3.8W (Ta), 375W (Tc)	-55°C ~ 175°C (TJ)
BSG0812NDATMA1 MOSFET N-CH 8TISON Infineon Technologies	5,306	-	询价单	数据表	*	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Infineon Technologies	2,000	-	询价单	数据表	StrongIRFET™ 2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta), 137A (Tc)	4.5V, 10V	2.35mOhm @ 70A, 10V	Surface Mount	2.35V @ 60µA	36 nC @ 4.5 V	30 V	±20V	3400 pF @ 15 V	-	-	PG-TO252-3-34	-	3W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)

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