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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF7241

IRF7241

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies

9,422 -
IRF7241

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V Surface Mount 3V @ 250µA 80 nC @ 10 V 40 V ±20V 3220 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF7202TR

IRF7202TR

MOSFET P-CH 20V 2.5A 8SO

Infineon Technologies

7,103 -
IRF7202TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.5A (Tc) 4.5V, 10V 250mOhm @ 1A, 10V Surface Mount 3V @ 250µA 15 nC @ 10 V 20 V ±20V 270 pF @ 20 V - - 8-SO - 1.6W (Ta), 2.5W (Tc) -
IPA60R600P7SE8228XKSA1

IPA60R600P7SE8228XKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies

420 -
IPA60R600P7SE8228XKSA1

数据表

CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 1.7A, 10V Through Hole 4V @ 80µA 9 nC @ 10 V 600 V ±20V 363 pF @ 400 V - - PG-TO220-FP - 21W (Tc) -40°C ~ 150°C (TJ)
IPD06N03LB G

IPD06N03LB G

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies

5,870 -
IPD06N03LB G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 6.1mOhm @ 50A, 10V Surface Mount 2V @ 40µA 22 nC @ 5 V 30 V ±20V 2800 pF @ 15 V - - PG-TO252-3-11 - 83W (Tc) -55°C ~ 175°C (TJ)
BSC100N03LSGATMA1

BSC100N03LSGATMA1

MOSFET N-CH 30V 13A/44A TDSON

Infineon Technologies

4,544 -
BSC100N03LSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 44A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 17 nC @ 10 V 30 V ±20V 1500 pF @ 15 V - - PG-TDSON-8-1 - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
IRF9333TRPBF

IRF9333TRPBF

MOSFET P-CH 30V 9.2A 8SO

Infineon Technologies

3,112 -
IRF9333TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.2A (Ta) 4.5V, 10V 19.4mOhm @ 9.2A, 10V Surface Mount 2.4V @ 25µA 38 nC @ 10 V 30 V ±20V 1110 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPP033N03LF2SAKSA1

IPP033N03LF2SAKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

990 -
IPP033N03LF2SAKSA1

数据表

StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 78A (Tc) 4.5V, 10V 3.3mOhm @ 50A, 10V Through Hole 2.35V @ 40µA 50 nC @ 10 V 30 V ±20V 2200 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
SPD07N60S5

SPD07N60S5

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

8,656 -
SPD07N60S5

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Surface Mount 5.5V @ 350µA 35 nC @ 10 V 600 V ±20V 970 pF @ 25 V - - PG-TO252-3-11 - 83W (Tc) -55°C ~ 150°C (TJ)
IPS50R520CP

IPS50R520CP

MOSFET N-CH 550V 7.1A TO251-3

Infineon Technologies

5,819 -
IPS50R520CP

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V Through Hole 3.5V @ 250µA 17 nC @ 10 V 550 V ±20V 680 pF @ 100 V - - PG-TO251-3-11 - 66W (Tc) -55°C ~ 150°C (TJ)
SPB35N10

SPB35N10

MOSFET N-CH 100V 35A TO263-3

Infineon Technologies

2,327 -
SPB35N10

数据表

SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 44mOhm @ 26.4A, 10V Surface Mount 4V @ 83µA 65 nC @ 10 V 100 V ±20V 1570 pF @ 25 V - - PG-TO263-3-2 - 150W (Tc) -55°C ~ 175°C (TJ)
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