| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7241MOSFET P-CH 40V 6.2A 8SO Infineon Technologies |
9,422 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | Surface Mount | 3V @ 250µA | 80 nC @ 10 V | 40 V | ±20V | 3220 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7202TRMOSFET P-CH 20V 2.5A 8SO Infineon Technologies |
7,103 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2.5A (Tc) | 4.5V, 10V | 250mOhm @ 1A, 10V | Surface Mount | 3V @ 250µA | 15 nC @ 10 V | 20 V | ±20V | 270 pF @ 20 V | - | - | 8-SO | - | 1.6W (Ta), 2.5W (Tc) | - |
|
IPA60R600P7SE8228XKSA1MOSFET N-CH 600V 6A TO220 Infineon Technologies |
420 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | Through Hole | 4V @ 80µA | 9 nC @ 10 V | 600 V | ±20V | 363 pF @ 400 V | - | - | PG-TO220-FP | - | 21W (Tc) | -40°C ~ 150°C (TJ) |
|
IPD06N03LB GMOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
5,870 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 6.1mOhm @ 50A, 10V | Surface Mount | 2V @ 40µA | 22 nC @ 5 V | 30 V | ±20V | 2800 pF @ 15 V | - | - | PG-TO252-3-11 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC100N03LSGATMA1MOSFET N-CH 30V 13A/44A TDSON Infineon Technologies |
4,544 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 44A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 1500 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9333TRPBFMOSFET P-CH 30V 9.2A 8SO Infineon Technologies |
3,112 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | Surface Mount | 2.4V @ 25µA | 38 nC @ 10 V | 30 V | ±20V | 1110 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPP033N03LF2SAKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
990 | - |
|
数据表 |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Ta), 78A (Tc) | 4.5V, 10V | 3.3mOhm @ 50A, 10V | Through Hole | 2.35V @ 40µA | 50 nC @ 10 V | 30 V | ±20V | 2200 pF @ 15 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) |
|
SPD07N60S5MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
8,656 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Surface Mount | 5.5V @ 350µA | 35 nC @ 10 V | 600 V | ±20V | 970 pF @ 25 V | - | - | PG-TO252-3-11 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IPS50R520CPMOSFET N-CH 550V 7.1A TO251-3 Infineon Technologies |
5,819 | - |
|
数据表 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | Through Hole | 3.5V @ 250µA | 17 nC @ 10 V | 550 V | ±20V | 680 pF @ 100 V | - | - | PG-TO251-3-11 | - | 66W (Tc) | -55°C ~ 150°C (TJ) |
|
SPB35N10MOSFET N-CH 100V 35A TO263-3 Infineon Technologies |
2,327 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | Surface Mount | 4V @ 83µA | 65 nC @ 10 V | 100 V | ±20V | 1570 pF @ 25 V | - | - | PG-TO263-3-2 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |