Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 59

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD60R360P7SE8228AUMA1 MOSFET N-CH 600V 9A TO252-3 Infineon Technologies	2,354	-	询价单	数据表	CoolMOS™ P7	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	360mOhm @ 2.7A, 10V	Surface Mount	4V @ 140µA	13 nC @ 10 V	600 V	±20V	555 pF @ 400 V	-	-	PG-TO252-3	-	41W (Tc)	-40°C ~ 150°C (TJ)
IPD60R800CEATMA1 MOSFET N-CH 600V 5.6A TO252-3 Infineon Technologies	8,674	-	询价单	数据表	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	10V	800mOhm @ 2A, 10V	Surface Mount	3.5V @ 170µA	17.2 nC @ 10 V	600 V	±20V	373 pF @ 100 V	-	-	PG-TO252-3	-	48W (Tc)	-40°C ~ 150°C (TJ)
ISC320N12LM6ATMA1 TRENCH >=100V Infineon Technologies	4,930	-	询价单	数据表	OptiMOS™ 6	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.4A (Ta), 24A (Tc)	3.3V, 10V	32mOhm @ 9A, 10V	Surface Mount	2.2V @ 11µA	10.1 nC @ 10 V	120 V	±20V	650 pF @ 60 V	-	-	SuperSO8	-	3W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IAUCN04S6N017TATMA1 MOSFET_(20V 40V) Infineon Technologies	1,367	-	询价单	数据表	OptiMOS™ 6	10-LSOP (0.216", 5.48mm Width) Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	58A (Ta), 120A (Tj)	7V, 10V	1.73mOhm @ 60A, 10V	Surface Mount	3V @ 40µA	49 nC @ 10 V	40 V	±20V	3250 pF @ 25 V	AEC-Q101	-	PG-LHDSO-10-1	Automotive	103W (Tc)	-55°C ~ 175°C (TJ)
IRFZ34NLPBF MOSFET N-CH 55V 29A TO262 Infineon Technologies	5,433	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	29A (Tc)	10V	40mOhm @ 16A, 10V	Through Hole	4V @ 250µA	34 nC @ 10 V	55 V	±20V	700 pF @ 25 V	-	-	TO-262	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)
IPP057N06N3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	3,174	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	5.7mOhm @ 80A, 10V	Through Hole	4V @ 58µA	82 nC @ 10 V	60 V	±20V	6600 pF @ 30 V	-	-	PG-TO220-3	-	115W (Tc)	-55°C ~ 175°C (TJ)
IPP052N06L3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	4,212	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	5mOhm @ 80A, 10V	Through Hole	2.2V @ 58µA	50 nC @ 4.5 V	60 V	±20V	8400 pF @ 30 V	-	-	PG-TO220-3	-	115W (Tc)	-55°C ~ 175°C (TJ)
IRF7465 MOSFET N-CH 150V 1.9A 8SO Infineon Technologies	6,699	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	10V	280mOhm @ 1.14A, 10V	Surface Mount	5.5V @ 250µA	15 nC @ 10 V	150 V	±30V	330 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF7521D1 MOSFET N-CH 20V 2.4A MICRO8 Infineon Technologies	6,641	-	询价单	数据表	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.4A (Ta)	2.7V, 4.5V	135mOhm @ 1.7A, 4.5V	Surface Mount	700mV @ 250µA (Min)	8 nC @ 4.5 V	20 V	±12V	260 pF @ 15 V	-	Schottky Diode (Isolated)	Micro8™	-	1.3W (Ta)	-55°C ~ 150°C (TJ)
IRF7523D1 MOSFET N-CH 30V 2.7A MICRO8 Infineon Technologies	4,669	-	询价单	数据表	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.7A (Ta)	4.5V, 10V	130mOhm @ 1.7A, 10V	Surface Mount	1V @ 250µA	12 nC @ 10 V	30 V	±20V	210 pF @ 25 V	-	Schottky Diode (Isolated)	Micro8™	-	1.25W (Ta)	-55°C ~ 150°C (TJ)

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