Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 58

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPU80R2K0P7AKMA1 MOSFET N-CH 800V 3A TO251-3 Infineon Technologies	1,190	-	询价单	数据表	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	2Ohm @ 940mA, 10V	Through Hole	3.5V @ 50µA	9 nC @ 10 V	800 V	±20V	175 pF @ 500 V	-	-	PG-TO251-3	-	24W (Tc)	-55°C ~ 150°C (TJ)
IPP044N03LF2SAKSA1 MOSFET N-CH 30V 70A TO220-3 Infineon Technologies	1,000	-	询价单	数据表	StrongIRFET™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta), 53A (Tc)	4.5V, 10V	4.35mOhm @ 30A, 10V	Through Hole	2.35V @ 30µA	41 nC @ 10 V	30 V	±20V	1800 pF @ 15 V	-	-	PG-TO220-3-U05	-	3.8W (Ta), 75W (Tc)	-55°C ~ 175°C (TJ)
IPD60R600CM8XTMA1 IPD60R600CM8XTMA1 Infineon Technologies	736	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tj)	10V	600mOhm @ 1.7A, 10V	Surface Mount	4.7V @ 40µA	6 nC @ 10 V	600 V	±20V	230 pF @ 400 V	-	-	PG-TO252-3-313	-	64W (Tc)	-55°C ~ 150°C (TJ)
IRFR1010ZTRRPBF MOSFET N-CH 55V 42A DPAK Infineon Technologies	4,053	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	7.5mOhm @ 42A, 10V	Surface Mount	4V @ 100µA	95 nC @ 10 V	55 V	±20V	2840 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
SPP04N60C3HKSA1 MOSFET N-CH 650V 4.5A TO220-3 Infineon Technologies	6,324	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	950mOhm @ 2.8A, 10V	Through Hole	3.9V @ 200µA	25 nC @ 10 V	650 V	±20V	490 pF @ 25 V	-	-	PG-TO220-3-1	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRFR120ZTR MOSFET N-CH 100V 8.7A DPAK Infineon Technologies	4,705	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.7A (Tc)	10V	190mOhm @ 5.2A, 10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	100 V	±20V	310 pF @ 25 V	-	-	TO-252AA (DPAK)	-	35W (Tc)	-55°C ~ 175°C (TJ)
SPP04N60S5BKSA1 MOSFET N-CH 600V 4.5A TO220-3 Infineon Technologies	6,483	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	950mOhm @ 2.8A, 10V	Through Hole	5.5V @ 200µA	22.9 nC @ 10 V	600 V	±20V	580 pF @ 25 V	-	-	PG-TO220-3-1	-	50W (Tc)	-55°C ~ 150°C (TJ)
SPB80N06S2L-11 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	8,858	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	11mOhm @ 40A, 10V	Surface Mount	2V @ 93µA	80 nC @ 10 V	55 V	±20V	2650 pF @ 25 V	-	-	PG-TO263-3-2	-	158W (Tc)	-55°C ~ 175°C (TJ)
IRLU7843PBF MOSFET N-CH 30V 161A IPAK Infineon Technologies	2,690	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	161A (Tc)	4.5V, 10V	3.3mOhm @ 15A, 10V	Through Hole	2.3V @ 250µA	50 nC @ 4.5 V	30 V	±20V	4380 pF @ 15 V	-	-	IPAK (TO-251AA)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IPA60R1K0CEXKSA1 MOSFET N-CH 600V 6.8A TO220 Infineon Technologies	336	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	1Ohm @ 1.5A, 10V	Through Hole	3.5V @ 130µA	13 nC @ 10 V	600 V	±20V	280 pF @ 100 V	-	-	PG-TO220-FP	-	26W (Tc)	-40°C ~ 150°C (TJ)

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