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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPD08N50C3BTMA1MOSFET N-CH 560V 7.6A TO252-3 Infineon Technologies |
4,881 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | Surface Mount | 3.9V @ 350µA | 32 nC @ 10 V | 560 V | ±20V | 750 pF @ 25 V | - | - | PG-TO252-3-11 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9520NLPBFMOSFET P-CH 100V 6.8A TO262 Infineon Technologies |
7,503 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | Through Hole | 4V @ 250µA | 27 nC @ 10 V | 100 V | ±20V | 350 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA50R650CEMOSFET N-CH 500V 6.1A TO220-FP Infineon Technologies |
4,872 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | Through Hole | 3.5V @ 150µA | 15 nC @ 10 V | 500 V | ±20V | 342 pF @ 100 V | - | - | PG-TO220-FP | - | 27.2W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IRF540NLPBFMOSFET N-CH 100V 33A TO262 Infineon Technologies |
8,504 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | Through Hole | 4V @ 250µA | 71 nC @ 10 V | 100 V | ±20V | 1960 pF @ 25 V | - | - | TO-262 | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7807D2TRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
6,765 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | Surface Mount | 1V @ 250µA | 17 nC @ 5 V | 30 V | ±12V | - | - | Schottky Diode (Isolated) | 8-SO | - | 2.5W (Tc) | - |
|
ISK036N03LM5AUSA1TRENCH <= 40V Infineon Technologies |
2,585 | - |
|
数据表 |
OptiMOS™ 5 | 6-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16.5A (Ta), 81A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | Surface Mount | 2V @ 250µA | 21.5 nC @ 10 V | 30 V | ±16V | 1400 pF @ 15 V | - | - | PG-VSON-6-1 | - | 2.1W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IAUCN04S7L009ATMA1MOSFET_(20V 40V) Infineon Technologies |
828 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 275A (Tj) | 4.5V, 10V | 0.91mOhm @ 88A, 10V | Surface Mount | 1.8V @ 60µA | 85 nC @ 10 V | 40 V | ±16V | 5704 pF @ 20 V | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | 129W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IAUCN04S7N009ATMA1MOSFET_(20V 40V) Infineon Technologies |
236 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 175A | 10V | - | Surface Mount | - | - | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | - | -55°C ~ 175°C |
|
|
IRF7241TRMOSFET P-CH 40V 6.2A 8SO Infineon Technologies |
4,812 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | Surface Mount | 3V @ 250µA | 80 nC @ 10 V | 40 V | ±20V | 3220 pF @ 25 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) |
|
|
IRF3711LPBFMOSFET N-CH 20V 110A TO262 Infineon Technologies |
4,832 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | Through Hole | 3V @ 250µA | 44 nC @ 4.5 V | 20 V | ±20V | 2980 pF @ 10 V | - | - | TO-262 | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) |
