Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 56

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFU9024N MOSFET P-CH 55V 11A IPAK Infineon Technologies	5,188	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	175mOhm @ 6.6A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	55 V	±20V	350 pF @ 25 V	-	-	IPAK (TO-251AA)	-	38W (Tc)	-55°C ~ 150°C (TJ)
SPP73N03S2L08XK MOSFET N-CH 30V 73A TO220-3 Infineon Technologies	3,358	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	73A (Tc)	4.5V, 10V	8.4mOhm @ 36A, 10V	Through Hole	2V @ 55µA	46.2 nC @ 10 V	30 V	±20V	1710 pF @ 25 V	-	-	PG-TO220-3-1	-	107W (Tc)	-55°C ~ 175°C (TJ)
64-4051 MOSFET N-CH 55V 16A DPAK Infineon Technologies	9,082	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	58mOhm @ 9.6A, 10V	Surface Mount	3V @ 250µA	9.9 nC @ 5 V	55 V	±16V	380 pF @ 25 V	-	-	TO-252AA (DPAK)	-	35W (Tc)	-55°C ~ 175°C (TJ)
BSZ0994NSATMA1 MOSFET N-CH 30V 13A 8TSDSON-25 Infineon Technologies	4,962	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	4.5V, 10V	7mOhm @ 5A, 10V	Surface Mount	2V @ 250µA	7 nC @ 4.5 V	30 V	±20V	890 pF @ 15 V	-	-	PG-TSDSON-8-25	-	2.1W (Ta)	-55°C ~ 150°C (TJ)
IRFR3704ZCPBF MOSFET N-CH 20V 60A DPAK Infineon Technologies	5,822	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60A (Ta)	-	8.4mOhm @ 15A, 10V	Surface Mount	-	14 nC @ 4.5 V	20 V	-	1190 pF @ 10 V	-	-	TO-252AA (DPAK)	-	-	-55°C ~ 175°C (TJ)
IRFHM8330TRPBF MOSFET N-CH 30V 16A 8PQFN Infineon Technologies	9,011	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta)	4.5V, 10V	6.6mOhm @ 20A, 10V	Surface Mount	2.35V @ 25µA	20 nC @ 10 V	30 V	±20V	1450 pF @ 25 V	-	-	8-PQFN (3.3x3.3), Power33	-	2.7W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)
SPB80N03S2L-06 G MOSFET N-CH 30V 80A TO263-3 Infineon Technologies	8,690	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	5.9mOhm @ 80A, 10V	Surface Mount	2V @ 80µA	68 nC @ 10 V	30 V	±20V	2530 pF @ 25 V	-	-	PG-TO263-3-2	-	150W (Tc)	-55°C ~ 175°C (TJ)
IAUC26N10S5L245ATMA1 MOSFET_(75V 120V( PG-TDSON-8 Infineon Technologies	4,728	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Tj)	4.5V, 10V	24.5mOhm @ 13A, 10V	Surface Mount	2.2V @ 13µA	12 nC @ 10 V	100 V	±20V	762 pF @ 50 V	-	-	PG-TDSON-8-33	-	40W (Tc)	-55°C ~ 175°C (TJ)
IRFR3303TRL MOSFET N-CH 30V 33A DPAK Infineon Technologies	7,139	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	31mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	29 nC @ 10 V	30 V	±20V	750 pF @ 25 V	-	-	TO-252AA (DPAK)	-	57W (Tc)	-55°C ~ 150°C (TJ)
SPA02N80C3XKSA1 MOSFET N-CH 800V 2A TO220-FP Infineon Technologies	3,318	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	2.7Ohm @ 1.2A, 10V	Through Hole	3.9V @ 120µA	16 nC @ 10 V	800 V	±20V	290 pF @ 100 V	-	-	PG-TO220-3-31	-	30.5W (Tc)	-55°C ~ 150°C (TJ)

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