富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPB120N06N G

IPB120N06N G

MOSFET N-CH 60V 75A D2PAK

Infineon Technologies

3,353 -
IPB120N06N G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 11.7mOhm @ 75A, 10V Surface Mount 4V @ 94µA 62 nC @ 10 V 60 V ±20V 2100 pF @ 30 V - - PG-TO263-3 - 158W (Tc) -55°C ~ 175°C (TJ)
IRF7663TRPBF

IRF7663TRPBF

MOSFET P-CH 20V 8.2A MICRO8

Infineon Technologies

2,596 -
IRF7663TRPBF

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8.2A (Ta) 2.5V, 4.5V 20mOhm @ 7A, 4.5V Surface Mount 1.2V @ 250µA 45 nC @ 5 V 20 V ±12V 2520 pF @ 10 V - - Micro8™ - 1.8W (Ta) -55°C ~ 150°C (TJ)
IRFHS8242TR2PBF

IRFHS8242TR2PBF

MOSFET N-CH 25V 9.9A PQFN

Infineon Technologies

4,986 -
IRFHS8242TR2PBF

数据表

- 6-PowerVDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 9.9A (Ta), 21A (Tc) - 13mOhm @ 8.5A, 10V Surface Mount 2.35V @ 25µA 10.4 nC @ 10 V 25 V - 653 pF @ 10 V - - 6-PQFN (2x2) - - -
IPD047N03LF2SATMA1

IPD047N03LF2SATMA1

MOSFET N-CH 30V 71A TO-252

Infineon Technologies

2,000 -
IPD047N03LF2SATMA1

数据表

StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 71A (Tc) 4.5V, 10V 4.7mOhm @ 40A, 10V Surface Mount 2.35V @ 30µA 32 nC @ 10 V 30 V ±20V 1400 pF @ 15 V - - PG-TO252-3 - 65W (Tc) -55°C ~ 175°C (TJ)
IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1

MOSFET_(75V 120V( PG-TSDSON-8

Infineon Technologies

4,210 -
IAUZ30N08S5N186ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tj) 6V, 10V 18.6mOhm @ 15A, 10V Surface Mount 3.8V @ 13µA 12.1 nC @ 10 V 80 V ±20V 759 pF @ 40 V - - PG-TSDSON-8-32 - 41W (Tc) -55°C ~ 175°C (TJ)
IPP050N03LF2SAKSA1

IPP050N03LF2SAKSA1

MOSFET N-CH 30V 50A TO220-3

Infineon Technologies

968 -
IPP050N03LF2SAKSA1

数据表

StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 53A (Tc) 4.5V, 10V 4.95mOhm @ 30A, 10V Through Hole 2.35V @ 30µA 32 nC @ 10 V 30 V ±20V 1400 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
IRF7413ZTRPBFXTMA1

IRF7413ZTRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

3,938 -
IRF7413ZTRPBFXTMA1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V Surface Mount 2.25V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1210 pF @ 15 V - - PG-DSO-8-902 - 2.5W (Ta) -55°C ~ 150°C (TJ)
IPP018N03LF2SAKSA1

IPP018N03LF2SAKSA1

TRENCH <= 40V

Infineon Technologies

1,973 -
IPP018N03LF2SAKSA1

数据表

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 128A (Tc) 4.5V, 10V 1.8mOhm @ 100A, 10V Through Hole 2.35V @ 110µA 143 nC @ 10 V 30 V ±20V 6400 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
IPZ40N04S5L3R6ATMA1

IPZ40N04S5L3R6ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies

4,328 -
IPZ40N04S5L3R6ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Tj) 4.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2V @ 21µA 32.8 nC @ 10 V 40 V ±16V 1966 pF @ 25 V AEC-Q101 - PG-TSDSON-8-33 Automotive 58W (Tc) -55°C ~ 175°C (TJ)
IPZ40N04S53R9ATMA1

IPZ40N04S53R9ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies

4,225 -
IPZ40N04S53R9ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 89A (Tj) 7V, 10V 3.9mOhm @ 20A, 10V Surface Mount 3.4V @ 21µA 25 nC @ 10 V 40 V ±20V 1737 pF @ 25 V AEC-Q101 - PG-TSDSON-8-33 Automotive 58W (Tc) -55°C ~ 175°C (TJ)
共 6460 条记录«上一页1... 5152535455565758...646下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户