| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB120N06N GMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
3,353 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 11.7mOhm @ 75A, 10V | Surface Mount | 4V @ 94µA | 62 nC @ 10 V | 60 V | ±20V | 2100 pF @ 30 V | - | - | PG-TO263-3 | - | 158W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7663TRPBFMOSFET P-CH 20V 8.2A MICRO8 Infineon Technologies |
2,596 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | Surface Mount | 1.2V @ 250µA | 45 nC @ 5 V | 20 V | ±12V | 2520 pF @ 10 V | - | - | Micro8™ | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFHS8242TR2PBFMOSFET N-CH 25V 9.9A PQFN Infineon Technologies |
4,986 | - |
|
数据表 |
- | 6-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.9A (Ta), 21A (Tc) | - | 13mOhm @ 8.5A, 10V | Surface Mount | 2.35V @ 25µA | 10.4 nC @ 10 V | 25 V | - | 653 pF @ 10 V | - | - | 6-PQFN (2x2) | - | - | - |
|
IPD047N03LF2SATMA1MOSFET N-CH 30V 71A TO-252 Infineon Technologies |
2,000 | - |
|
数据表 |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 71A (Tc) | 4.5V, 10V | 4.7mOhm @ 40A, 10V | Surface Mount | 2.35V @ 30µA | 32 nC @ 10 V | 30 V | ±20V | 1400 pF @ 15 V | - | - | PG-TO252-3 | - | 65W (Tc) | -55°C ~ 175°C (TJ) |
|
IAUZ30N08S5N186ATMA1MOSFET_(75V 120V( PG-TSDSON-8 Infineon Technologies |
4,210 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tj) | 6V, 10V | 18.6mOhm @ 15A, 10V | Surface Mount | 3.8V @ 13µA | 12.1 nC @ 10 V | 80 V | ±20V | 759 pF @ 40 V | - | - | PG-TSDSON-8-32 | - | 41W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP050N03LF2SAKSA1MOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
968 | - |
|
数据表 |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 53A (Tc) | 4.5V, 10V | 4.95mOhm @ 30A, 10V | Through Hole | 2.35V @ 30µA | 32 nC @ 10 V | 30 V | ±20V | 1400 pF @ 15 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7413ZTRPBFXTMA1TRENCH <= 40V Infineon Technologies |
3,938 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | Surface Mount | 2.25V @ 250µA | 14 nC @ 4.5 V | 30 V | ±20V | 1210 pF @ 15 V | - | - | PG-DSO-8-902 | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPP018N03LF2SAKSA1TRENCH <= 40V Infineon Technologies |
1,973 | - |
|
数据表 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Ta), 128A (Tc) | 4.5V, 10V | 1.8mOhm @ 100A, 10V | Through Hole | 2.35V @ 110µA | 143 nC @ 10 V | 30 V | ±20V | 6400 pF @ 15 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) |
|
IPZ40N04S5L3R6ATMA1MOSFET_(20V 40V) PG-TSDSON-8 Infineon Technologies |
4,328 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 87A (Tj) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | Surface Mount | 2V @ 21µA | 32.8 nC @ 10 V | 40 V | ±16V | 1966 pF @ 25 V | AEC-Q101 | - | PG-TSDSON-8-33 | Automotive | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
IPZ40N04S53R9ATMA1MOSFET_(20V 40V) PG-TSDSON-8 Infineon Technologies |
4,225 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 89A (Tj) | 7V, 10V | 3.9mOhm @ 20A, 10V | Surface Mount | 3.4V @ 21µA | 25 nC @ 10 V | 40 V | ±20V | 1737 pF @ 25 V | AEC-Q101 | - | PG-TSDSON-8-33 | Automotive | 58W (Tc) | -55°C ~ 175°C (TJ) |