Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 54

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD50R520CP MOSFET N-CH 500V 7.1A TO252-3 Infineon Technologies	7,443	-	询价单	数据表	CoolMOS™ CP	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.1A (Tc)	10V	520mOhm @ 3.8A, 10V	Surface Mount	3.5V @ 250µA	17 nC @ 10 V	500 V	±20V	680 pF @ 100 V	-	-	PG-TO252-3-11	-	66W (Tc)	-55°C ~ 150°C (TJ)
IPP16CN10NGHKSA1 MOSFET N-CH 100V 53A TO220-3 Infineon Technologies	6,196	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	53A (Tc)	10V	16.5mOhm @ 53A, 10V	Through Hole	4V @ 61µA	48 nC @ 10 V	100 V	±20V	3220 pF @ 50 V	-	-	PG-TO220-3	-	100W (Tc)	-55°C ~ 175°C (TJ)
IPL65R650C6SATMA1 MOSFET N-CH 650V 6.7A THIN-PAK Infineon Technologies	6,915	-	询价单	数据表	CoolMOS™ C6	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	10V	650mOhm @ 2.1A, 10V	Surface Mount	3.5V @ 210µA	21 nC @ 10 V	650 V	±20V	440 pF @ 100 V	-	-	PG-TSON-8-2	-	56.8W (Tc)	-40°C ~ 150°C (TJ)
IPD60R600P7SE8228AUMA1 MOSFET N-CH 600V 6A TO252-3 Infineon Technologies	2,276	-	询价单	数据表	CoolMOS™ P7	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	600mOhm @ 1.7A, 10V	Surface Mount	4V @ 80µA	9 nC @ 10 V	600 V	±20V	363 pF @ 400 V	-	-	PG-TO252-3	-	30W (Tc)	-40°C ~ 150°C (TJ)
IPD60R2K0C6ATMA1 MOSFET N-CH 600V 2.4A TO252-3 Infineon Technologies	2,500	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	2Ohm @ 760mA, 10V	Surface Mount	3.5V @ 60µA	6.7 nC @ 10 V	600 V	±20V	140 pF @ 100 V	-	-	PG-TO252-3	-	22.3W (Tc)	-55°C ~ 150°C (TJ)
IPD30N10S3L34ATMA2 MOSFET_(75V 120V( Infineon Technologies	2,499	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	31mOhm @ 30A, 10V	Surface Mount	2.4V @ 29µA	31 nC @ 10 V	100 V	±20V	1976 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	57W (Tc)	-55°C ~ 175°C (TJ)
SPD50N03S2-07 MOSFET N-CH 30V 50A TO252-3 Infineon Technologies	4,022	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	7.3mOhm @ 50A, 10V	Surface Mount	4V @ 85µA	46.5 nC @ 10 V	30 V	±20V	2170 pF @ 25 V	-	-	PG-TO252-3-11	-	136W (Tc)	-55°C ~ 175°C (TJ)
BSP135 E6327 MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies	8,827	-	询价单	数据表	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	120mA (Ta)	0V, 10V	45Ohm @ 120mA, 10V	Surface Mount	1V @ 94µA	4.9 nC @ 5 V	600 V	±20V	146 pF @ 25 V	-	-	PG-SOT223-4	-	1.8W (Ta)	-55°C ~ 150°C (TJ)
IAUZ40N06S5N105ATMA1 MOSFET_)40V 60V) PG-TSDSON-8 Infineon Technologies	5,003	-	询价单	数据表	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tj)	7V, 10V	10.5mOhm @ 20A, 10V	Surface Mount	3.4V @ 13µA	16.3 nC @ 10 V	60 V	±20V	1099 pF @ 30 V	AEC-Q101	-	PG-TSDSON-8-32	Automotive	42W (Tc)	-55°C ~ 175°C (TJ)
IPA50R800CE MOSFET N-CH 500V 5A TO220-FP Infineon Technologies	2,863	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	13V	800mOhm @ 1.5A, 13V	Through Hole	3.5V @ 130µA	12.4 nC @ 10 V	500 V	±20V	280 pF @ 100 V	-	-	PG-TO220-FP	-	26.4W (Tc)	-40°C ~ 150°C (TJ)

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