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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IAUCN04S7L011ATMA1MOSFET_(20V 40V) Infineon Technologies |
915 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 222A (Tj) | 4.5V, 10V | 1.13mOhm @ 60A, 10V | Surface Mount | 1.8V @ 45µA | 64 nC @ 10 V | 40 V | ±16V | 4240 pF @ 20 V | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | 105W (Tc) | -55°C ~ 175°C (TJ) |
|
IPI35CN10N GMOSFET N-CH 100V 27A TO262-3 Infineon Technologies |
4,659 | - |
|
数据表 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 35mOhm @ 27A, 10V | Through Hole | 4V @ 29µA | 24 nC @ 10 V | 100 V | ±20V | 1570 pF @ 50 V | - | - | PG-TO262-3 | - | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR024NTRLMOSFET N-CH 55V 17A DPAK Infineon Technologies |
2,556 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | Surface Mount | 2V @ 250µA | 15 nC @ 5 V | 55 V | ±16V | 480 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR4104TRLPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
5,747 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | Surface Mount | 4V @ 250µA | 89 nC @ 10 V | 40 V | ±20V | 2950 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFR5505TRLMOSFET P-CH 55V 18A DPAK Infineon Technologies |
3,569 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | Surface Mount | 4V @ 250µA | 32 nC @ 10 V | 55 V | ±20V | 650 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 57W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP020N03LF2SAKSA1TRENCH <= 40V Infineon Technologies |
897 | - |
|
数据表 |
StrongIRFET™2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Ta), 125A (Tc) | 4.5V, 10V | 2.05mOhm @ 70A, 10V | Through Hole | 2.35V @ 80µA | 104 nC @ 10 V | 30 V | ±20V | 4700 pF @ 15 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF3205ZPBFAKSA1TRENCH 40<-<100V Infineon Technologies |
5,266 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | Through Hole | 4V @ 250µA | 110 nC @ 10 V | 55 V | ±20V | 3450 pF @ 25 V | - | - | PG-TO220-3-904 | - | 170W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF3000PBFMOSFET N-CH 300V 1.6A 8SO Infineon Technologies |
7,233 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.6A (Ta) | 10V | 400mOhm @ 960mA, 10V | Surface Mount | 5V @ 250µA | 33 nC @ 10 V | 300 V | ±30V | 730 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF7726TRMOSFET P-CH 30V 7A MICRO8 Infineon Technologies |
8,944 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4.5V, 10V | 26mOhm @ 7A, 10V | Surface Mount | 2.5V @ 250µA | 69 nC @ 10 V | 30 V | ±20V | 2204 pF @ 25 V | - | - | Micro8™ | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRLML5203GTRPBFMOSFET P-CH 30V 3A SOT-23-3 Infineon Technologies |
9,830 | - |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | Surface Mount | 2.5V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 510 pF @ 25 V | - | - | Micro3™/SOT-23 | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
