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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPW65R037C6FKSA1MOSFET N-CH 650V 83.2A TO247-3 Infineon Technologies |
4,974 | - |
|
数据表 |
CoolMOS™ C6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 83.2A (Tc) | 10V | 37mOhm @ 33.1A, 10V | Through Hole | 3.5V @ 3.3mA | 330 nC @ 10 V | 650 V | ±20V | 7240 pF @ 100 V | - | - | PG-TO247-3 | - | 500W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF3610SPBFMOSFET N-CH 100V 103A D2PAK Infineon Technologies |
4,154 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | Surface Mount | 4V @ 250µA | 150 nC @ 10 V | 100 V | ±20V | 5380 pF @ 25 V | - | - | PG-TO263-3 | - | 333W (Tc) | -55°C ~ 175°C (TJ) |
|
IAUCN04S7N012ATMA1MOSFET_(20V 40V) Infineon Technologies |
3,371 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 10V | - | Surface Mount | - | 55 nC @ 10 V | 40 V | - | - | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | - | -55°C ~ 175°C |
|
|
IAUCN04S7N024DATMA1MOSFET_(20V 40V) Infineon Technologies |
2,465 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ISZ033N03LF2SATMA1ISZ033N03LF2SATMA1 Infineon Technologies |
8,136 | - |
|
数据表 |
StrongIRFET™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 109A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | Surface Mount | 2.35V @ 30µA | 28 nC @ 10 V | 30 V | ±20V | 1415 pF @ 15 V | - | - | PG-TSDSON-8 FL | - | 3W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD040N03LF2SATMA1IPD040N03LF2SATMA1 Infineon Technologies |
2,255 | - |
|
数据表 |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 73A (Tc) | 4.5V, 10V | 4.05mOhm @ 40A, 10V | Surface Mount | 2.35V @ 30µA | 41 nC @ 10 V | 30 V | ±20V | 1800 pF @ 15 V | - | - | PG-TO252-3-34 | - | 3W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BSC0580NSATMA1TRENCH <= 40V Infineon Technologies |
3,676 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IAUCN08S7L110ATMA1IAUCN08S7L110ATMA1 Infineon Technologies |
6,745 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tj) | 4.5V, 10V | 11mOhm @ 20A, 10V | Surface Mount | 2V @ 14µA | 19.3 nC @ 10 V | 80 V | ±16V | 1056 pF @ 40 V | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IAUCN10S7L180ATMA1IAUCN10S7L180ATMA1 Infineon Technologies |
4,477 | - |
|
数据表 |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 39A (Tj) | 4.5V, 10V | 18mOhm @ 20A, 10V | Surface Mount | 2V @ 14µA | 14.3 nC @ 10 V | 100 V | ±16V | 868 pF @ 50 V | AEC-Q101 | - | PG-TDSON-8-34 | Automotive | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
|
ISZ028N03LF2SATMA1ISZ028N03LF2SATMA1 Infineon Technologies |
2,499 | - |
|
数据表 |
StrongIRFET™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Ta), 128A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | Surface Mount | 2.35V @ 30µA | 19 nC @ 4.5 V | 30 V | ±20V | 1780 pF @ 15 V | - | - | PG-TSDSON-8 FL | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) |
