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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9392TRPBFMOSFET P-CH 30V 9.8A 8SO Infineon Technologies |
7,307 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | Surface Mount | 2.4V @ 25µA | 14 nC @ 4.5 V | 30 V | ±25V | 1270 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPB65R125CFD7ATMA1HIGH POWER_NEW Infineon Technologies |
7,811 | - |
|
数据表 |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 125mOhm @ 8.5A, 10V | Surface Mount | 4.5V @ 420µA | 36 nC @ 10 V | 650 V | ±20V | 1694 pF @ 400 V | - | - | PG-TO263-3 | - | 98W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFB3607GPBFMOSFET N-CH 75V 80A TO220AB Infineon Technologies |
9,628 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | Through Hole | 4V @ 100µA | 84 nC @ 10 V | 75 V | ±20V | 3070 pF @ 50 V | - | - | TO-220AB | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFH5104TRPBFMOSFET N-CH 40V 24A/100A PQFN Infineon Technologies |
8,219 | - |
|
数据表 |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | Surface Mount | 4V @ 100µA | 80 nC @ 10 V | 40 V | ±20V | 3120 pF @ 25 V | - | - | PQFN (5x6) | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPL65R130CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
4,362 | - |
|
数据表 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 130mOhm @ 8.5A, 10V | Surface Mount | 4.5V @ 420µA | 36 nC @ 10 V | 650 V | ±20V | 1694 pF @ 400 V | - | - | PG-VSON-4 | - | 127W (Tc) | -40°C ~ 150°C (TJ) |
|
IRFH5204TRPBFMOSFET N-CH 40V 22A/100A PQFN Infineon Technologies |
2,210 | - |
|
数据表 |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | Surface Mount | 4V @ 100µA | 65 nC @ 10 V | 40 V | ±20V | 2460 pF @ 25 V | - | - | PQFN (5x6) | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFH5220TRPBFMOSFET N-CH 200V 3.8A/20A PQFN Infineon Technologies |
8,395 | - |
|
数据表 |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | Surface Mount | 5V @ 100µA | 30 nC @ 10 V | 200 V | ±20V | 1380 pF @ 50 V | - | - | PQFN (5x6) | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRL6342PBFMOSFET N-CH 30V 9.9A 8SO Infineon Technologies |
9,346 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 9.9A (Ta) | 2.5V, 4.5V | 14.6mOhm @ 9.9A, 4.5V | Surface Mount | 1.1V @ 10µA | 11 nC @ 4.5 V | 30 V | ±12V | 1025 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IPT029N08N5ATMA1MOSFET N-CH 80V 52A/169A HSOF-8 Infineon Technologies |
2,577 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | Surface Mount | 3.8V @ 108µA | 87 nC @ 10 V | 80 V | ±20V | 6500 pF @ 40 V | - | - | PG-HSOF-8-1 | - | 168W (Tc) | -55°C ~ 175°C (TJ) |
|
IPDD60R105CFD7XTMA1MOSFET N-CH 600V 31A HDSOP-10 Infineon Technologies |
5,090 | - |
|
数据表 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | - | 105mOhm @ 7.8A, 10V | Surface Mount | 4.5V @ 390µA | 36 nC @ 10 V | 600 V | ±20V | 1504 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 198W (Tc) | -55°C ~ 150°C (TJ) |
