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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPW65R070C6FKSA1MOSFET N-CH 650V 53.5A TO247-3 Infineon Technologies |
8,129 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 53.5A (Tc) | 10V | 70mOhm @ 17.6A, 10V | Through Hole | 3.5V @ 1.76mA | 170 nC @ 10 V | 650 V | ±20V | 3900 pF @ 100 V | - | - | PG-TO247-3-1 | - | 391W (Tc) | -55°C ~ 150°C (TJ) |
|
AUIRFZ48ZMOSFET N-CH 55V 61A TO220 Infineon Technologies |
8,310 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | Through Hole | 4V @ 250µA | 64 nC @ 10 V | 55 V | ±20V | 1720 pF @ 25 V | - | - | TO-220 | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFZ48ZSMOSFET N-CH 55V 61A D2PAK Infineon Technologies |
4,259 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | Surface Mount | 4V @ 250µA | 64 nC @ 10 V | 55 V | ±20V | 1720 pF @ 25 V | - | - | D2PAK | - | 91W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRL1404ZMOSFET N-CH 40V 160A TO220 Infineon Technologies |
2,366 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | Through Hole | 2.7V @ 250µA | 110 nC @ 5 V | 40 V | ±16V | 5080 pF @ 25 V | - | - | TO-220 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRL1404ZLMOSFET N-CH 40V 160A TO262 Infineon Technologies |
5,054 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | Through Hole | 2.7V @ 250µA | 110 nC @ 5 V | 40 V | ±16V | 5080 pF @ 25 V | - | - | TO-262 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRL1404ZSMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
8,171 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | Surface Mount | 2.7V @ 250µA | 110 nC @ 5 V | 40 V | ±16V | 5080 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRL3705ZSTRLMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
7,694 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | - | 8mOhm @ 52A, 10V | Surface Mount | 3V @ 250µA | 60 nC @ 5 V | 55 V | - | 2880 pF @ 25 V | - | - | D2PAK | - | 130W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRLR024NMOSFET N-CH 55V 17A DPAK Infineon Technologies |
3,959 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | Surface Mount | 2V @ 250µA | 15 nC @ 5 V | 55 V | ±16V | 480 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRLR024NTRLMOSFET N-CH 55V 17A DPAK Infineon Technologies |
2,711 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | Surface Mount | 2V @ 250µA | 15 nC @ 5 V | 55 V | ±16V | 480 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRLR2703MOSFET N-CH 30V 20A DPAK Infineon Technologies |
7,678 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 45mOhm @ 14A, 10V | Surface Mount | 1V @ 250µA | 15 nC @ 4.5 V | 30 V | ±16V | 450 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
