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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BUZ73A HMOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
8,993 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
BUZ73A H3046MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
9,890 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
BUZ73LHXKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
4,472 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | Through Hole | 2V @ 1mA | - | 200 V | ±20V | 840 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
IPA65R110CFDXKSA1MOSFET N-CH 650V 31.2A TO220 Infineon Technologies |
6,689 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | Through Hole | 4.5V @ 1.3mA | 118 nC @ 10 V | 650 V | ±20V | 3240 pF @ 100 V | - | - | PG-TO220-3-111 | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) |
|
IGT65R035D2ATMA1HV GAN DISCRETES Infineon Technologies |
4,294 | - |
|
数据表 |
CoolGaN™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 49A (Tc) | - | - | Surface Mount | 1.6V @ 4.2mA | 7.7 nC @ 3 V | 650 V | -10V | 540 pF @ 400 V | - | - | PG-HSOF-8 | - | 167W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220 Infineon Technologies |
2,029 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 3.5V @ 730µA | 73 nC @ 10 V | 650 V | ±20V | 1620 pF @ 100 V | - | - | PG-TO220-3-111 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPTA60R180CM8XTMA1IPTA60R180CM8XTMA1 Infineon Technologies |
19 | - |
|
数据表 |
CoolMOS™ | 4-PowerLSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tj) | 10V | 180mOhm @ 5.6A, 10V | Surface Mount | 4.7V @ 140µA | 17 nC @ 10 V | 600 V | ±20V | 743 pF @ 400 V | - | - | PG-LHSOF-4-1 | - | 119W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPDD60R180CM8XTMA1IPDD60R180CM8XTMA1 Infineon Technologies |
4,277 | - |
|
数据表 |
CoolMOS™ | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Tj) | 10V | 180mOhm @ 5.6A, 10V | Surface Mount | 4.7V @ 140µA | 17 nC @ 10 V | 600 V | ±20V | 743 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 169W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA65R190CFDXKSA1MOSFET N-CH 650V 17.5A TO220 Infineon Technologies |
4,081 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | Through Hole | 4.5V @ 730µA | 68 nC @ 10 V | 650 V | ±20V | 1850 pF @ 100 V | - | - | PG-TO220-3-111 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPA65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO220 Infineon Technologies |
4,316 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | Through Hole | 4.5V @ 440µA | 41 nC @ 10 V | 650 V | ±20V | 1100 pF @ 100 V | - | - | PG-TO220-3-111 | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
