Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 561

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IAUCN04S7N019DATMA1 MOSFET_(20V 40V) Infineon Technologies	5,533	-	询价单	数据表	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISP670P06NMAXTSA1 ISP670P06NMAXTSA1 Infineon Technologies	8,686	-	询价单	数据表	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	3.7A (Ta), 6.4A (Tc)	10V	67mOhm @ 3.7A, 10V	Surface Mount	4V @ 1.037mA	48 nC @ 10 V	60 V	±20V	1800 pF @ 30 V	AEC-Q101	-	PG-SOT223-4-21	Automotive	1.8W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
BSF030NE2LQXUMA1 MOSFET N-CH 25V 24A/75A 2WDSON Infineon Technologies	2,372	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 75A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	Surface Mount	2V @ 250µA	23 nC @ 10 V	25 V	±20V	1700 pF @ 12 V	-	-	MG-WDSON-2, CanPAK M™	-	2.2W (Ta), 28W (Tc)	-40°C ~ 150°C (TJ)
IPB042N10N3GE8187ATMA1 MOSFET N-CH 100V 100A D2PAK Infineon Technologies	8,825	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	4.2mOhm @ 50A, 10V	Surface Mount	3.5V @ 150µA	117 nC @ 10 V	100 V	±20V	8410 pF @ 50 V	-	-	PG-TO263-3	-	214W (Tc)	-55°C ~ 175°C (TJ)
IPB180N03S4LH0ATMA1 MOSFET N-CH 30V 180A TO263-7 Infineon Technologies	3,008	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	4.5V, 10V	0.95mOhm @ 100A, 10V	Surface Mount	2.2V @ 200µA	300 nC @ 10 V	30 V	±16V	23000 pF @ 25 V	-	-	PG-TO263-7-3	-	250W (Tc)	-55°C ~ 175°C (TJ)
IPB45N04S4L08ATMA1 MOSFET N-CH 40V 45A TO263-3-2 Infineon Technologies	2,568	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	4.5V, 10V	7.6mOhm @ 45A, 10V	Surface Mount	2.2V @ 17µA	30 nC @ 10 V	40 V	+20V, -16V	2340 pF @ 25 V	-	-	PG-TO263-3-2	-	45W (Tc)	-55°C ~ 175°C (TJ)
IPB65R660CFDATMA1 MOSFET N-CH 650V 6A D2PAK Infineon Technologies	9,814	-	询价单	数据表	CoolMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	660mOhm @ 2.1A, 10V	Surface Mount	4.5V @ 200µA	22 nC @ 10 V	650 V	±20V	615 pF @ 100 V	-	-	PG-TO263-3	-	62.5W (Tc)	-55°C ~ 150°C (TJ)
IPD100N06S403ATMA1 MOSFET N-CH 60V 100A TO252-3-11 Infineon Technologies	7,368	-	询价单	数据表	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.5mOhm @ 100A, 10V	Surface Mount	4V @ 90µA	128 nC @ 10 V	60 V	±20V	10400 pF @ 25 V	-	-	PG-TO252-3-11	-	150W (Tc)	-55°C ~ 175°C (TJ)
IAUCN10S7N074ATMA1 IAUCN10S7N074ATMA1 Infineon Technologies	5,300	-	询价单	数据表	OptiMOS™ 7	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	78A (Tj)	7V, 10V	7.4mOhm @ 39A, 10V	Surface Mount	3.2V @ 35µA	27.9 nC @ 10 V	100 V	±20V	1950 pF @ 50 V	AEC-Q101	-	PG-TDSON-8-34	Automotive	96W (Tc)	-55°C ~ 175°C (TJ)
IPP034N08N5XKSA1 TRENCH 40<-<100V Infineon Technologies	5,329	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	6V, 10V	3.4mOhm @ 100A, 10V	Through Hole	3.8V @ 108µA	87 nC @ 10 V	80 V	±20V	6240 pF @ 40 V	-	-	PG-TO220-3-1	-	167W (Tc)	-55°C ~ 175°C (TJ)

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