Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 559

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP65R115CFD7AAKSA1 MOSFET N-CH 650V 21A TO220-3 Infineon Technologies	3	-	询价单	数据表	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	115mOhm @ 9.7A, 10V	Through Hole	4.5V @ 490µA	41 nC @ 10 V	650 V	±20V	1950 pF @ 400 V	AEC-Q101	-	PG-TO220-3	Automotive	114W (Tc)	-40°C ~ 150°C (TJ)
IPP65R090CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	9,059	-	询价单	数据表	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	90mOhm @ 12.5A, 10V	Through Hole	4.5V @ 630µA	53 nC @ 10 V	650 V	±20V	2513 pF @ 400 V	-	-	PG-TO220-3	-	127W (Tc)	-55°C ~ 150°C (TJ)
IPW60R105CFD7XKSA1 MOSFET N-CH 600V 21A TO247-3 Infineon Technologies	4	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	21A (Tc)	10V	105mOhm @ 9.3A, 10V	Through Hole	4.5V @ 470µA	42 nC @ 10 V	600 V	±20V	1752 pF @ 400 V	-	-	PG-TO247-3-41	-	106W (Tc)	-55°C ~ 150°C (TJ)
IPT60R065S7XTMA1 MOSFET N-CH 600V 8A 8HSOF Infineon Technologies	3,909	-	询价单	数据表	CoolMOS™S7	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	12V	65mOhm @ 8A, 12V	Surface Mount	4.5V @ 490µA	51 nC @ 12 V	600 V	±20V	1932 pF @ 300 V	-	-	PG-HSOF-8-2	-	167W (Tc)	-55°C ~ 150°C (TJ)
IPWS65R035CFD7AXKSA1 MOSFET N-CH 650V 63A TO247-3-41 Infineon Technologies	6,204	-	询价单	数据表	CoolMOS™ CFD7A	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	63A (Tc)	10V	35mOhm @ 35.8A, 10V	Through Hole	4.5V @ 1.79mA	145 nC @ 10 V	650 V	±20V	7149 pF @ 400 V	AEC-Q101	-	PG-TO247-3-41	Automotive	305W (Tc)	-40°C ~ 150°C (TJ)
IPB60R045P7ATMA1 MOSFET N-CH 600V 61A TO263-3-2 Infineon Technologies	9,766	-	询价单	数据表	CoolMOS™ P7	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V	45mOhm @ 22.5A, 10V	Surface Mount	4V @ 1.08mA	90 nC @ 10 V	600 V	±20V	3891 pF @ 400 V	-	-	PG-TO263-3-2	-	201W (Tc)	-55°C ~ 150°C (TJ)
IPBE65R075CFD7AATMA1 MOSFET N-CH 650V 32A TO263-7 Infineon Technologies	3,115	-	询价单	数据表	CoolMOS™ CFD7A	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	75mOhm @ 16.4A, 10V	Surface Mount	4.5V @ 820µA	68 nC @ 10 V	650 V	±20V	3288 pF @ 400 V	AEC-Q101	-	PG-TO263-7-3-10	Automotive	171W (Tc)	-40°C ~ 150°C (TJ)
IMBG65R083M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	9,663	-	询价单	数据表	CoolSIC™ M1	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	28A (Tc)	18V	111mOhm @ 11.2A, 18V	Surface Mount	5.7V @ 3.3mA	19 nC @ 18 V	650 V	+23V, -5V	624 pF @ 400 V	-	-	PG-TO263-7-12	-	126W (Tc)	-55°C ~ 175°C (TJ)
IRFP4568PBFXKMA1 TRENCH >=100V PG-TO247-3 Infineon Technologies	3,034	-	询价单	数据表	HEXFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	171A (Tc)	10V	5.9mOhm @ 103A, 10V	Through Hole	5V @ 250µA	227 nC @ 10 V	150 V	±30V	10470 pF @ 50 V	-	-	TO-247AC	-	517W (Tc)	-55°C ~ 175°C (TJ)
IMBG65R039M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	6,410	-	询价单	数据表	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	54A (Tc)	18V	51mOhm @ 25A, 18V	Surface Mount	5.7V @ 7.5mA	41 nC @ 18 V	650 V	+23V, -5V	1393 pF @ 400 V	-	-	PG-TO263-7-12	-	211W (Tc)	-55°C ~ 175°C (TJ)

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