Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 557

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AUIRLR2703TRL MOSFET N-CH 30V 20A DPAK Infineon Technologies	4,260	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	-	45mOhm @ 14A, 10V	Surface Mount	1V @ 250µA	15 nC @ 4.5 V	30 V	-	450 pF @ 25 V	-	-	TO-252AA (DPAK)	-	45W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR2905 MOSFET N-CH 55V 42A DPAK Infineon Technologies	4,265	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4V, 10V	27mOhm @ 25A, 10V	Surface Mount	2V @ 250µA	48 nC @ 5 V	55 V	±16V	1700 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR2905TRL MOSFET N-CH 55V 42A DPAK Infineon Technologies	6,545	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4V, 10V	27mOhm @ 25A, 10V	Surface Mount	2V @ 250µA	48 nC @ 5 V	55 V	±16V	1700 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR2905Z MOSFET N-CH 55V 42A DPAK Infineon Technologies	9,933	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	13.5mOhm @ 36A, 10V	Surface Mount	3V @ 250µA	35 nC @ 5 V	55 V	±16V	1570 pF @ 25 V	-	-	TO-252AA (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR3410 MOSFET N-CH 100V 17A DPAK Infineon Technologies	4,029	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 10V	105mOhm @ 10A, 10V	Surface Mount	2V @ 250µA	34 nC @ 5 V	100 V	±16V	800 pF @ 25 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR3410TR MOSFET N-CH 100V 17A DPAK Infineon Technologies	4,346	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 10V	105mOhm @ 10A, 10V	Surface Mount	2V @ 250µA	34 nC @ 5 V	100 V	±16V	800 pF @ 25 V	-	-	TO-252AA (DPAK)	-	79W (Tc)	-55°C ~ 175°C (TJ)
AUIRLR3705Z MOSFET N-CH 55V 42A DPAK Infineon Technologies	7,643	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	4.5V, 10V	8mOhm @ 42A, 10V	Surface Mount	3V @ 250µA	66 nC @ 5 V	55 V	±16V	2900 pF @ 25 V	-	-	TO-252AA (DPAK)	-	130W (Tc)	-55°C ~ 175°C (TJ)
IRF9332PBF MOSFET P-CH 30V 9.8A 8SO Infineon Technologies	7,180	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	9.8A (Ta)	4.5V, 10V	17.5mOhm @ 9.8A, 10V	Surface Mount	2.4V @ 25µA	41 nC @ 10 V	30 V	±20V	1270 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IPT60R125G7XTMA1 MOSFET N-CH 600V 20A 8HSOF Infineon Technologies	5,118	-	询价单	数据表	CoolMOS™ G7	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	125mOhm @ 6.4A, 10V	Surface Mount	4V @ 320µA	27 nC @ 10 V	600 V	±20V	1080 pF @ 400 V	-	-	PG-HSOF-8-2	-	120W (Tc)	-55°C ~ 150°C (TJ)
IRF9392PBF MOSFET P-CH 30V 9.8A 8SO Infineon Technologies	2,969	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	9.8A (Ta)	10V, 20V	12.1mOhm @ 7.8A, 20V	Surface Mount	2.4V @ 25µA	14 nC @ 4.5 V	30 V	±25V	1270 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)

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