订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD50N06S4L12ATMA1MOSFET N-CH 60V 50A TO252-3-11 Infineon Technologies |
5,397 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | Surface Mount | 2.2V @ 20µA | 40 nC @ 10 V | 60 V | ±16V | 2890 pF @ 25 V | - | - | PG-TO252-3-11 | - | 50W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD65R660CFDBTMA1MOSFET N-CH 650V 6A TO252-3 Infineon Technologies |
2,884 | - |
|
数据表 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | Surface Mount | 4.5V @ 200µA | 22 nC @ 10 V | 650 V | ±20V | 615 pF @ 100 V | - | - | PG-TO252-3 | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
BSB012NE2LXMOSFET N-CH 25V 37A/170A 2WDSON Infineon Technologies |
4,230 | - |
|
数据表 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 37A (Ta), 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 67 nC @ 10 V | 25 V | ±20V | 4900 pF @ 12 V | - | - | MG-WDSON-2, CanPAK M™ | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) |
|
BSS84PH6327XTSA1MOSFET P-CH 60V 170MA SOT23-3 Infineon Technologies |
2,496 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | Surface Mount | 2V @ 20µA | 1.5 nC @ 10 V | 60 V | ±20V | 19 pF @ 25 V | - | - | PG-SOT23 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
SN7002NH6327XTSA1MOSFET N-CH 60V 200MA SOT23-3 Infineon Technologies |
5,790 | - |
|
数据表 |
SIPMOS® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Surface Mount | 1.8V @ 26µA | 1.5 nC @ 10 V | 60 V | ±20V | 45 pF @ 25 V | AEC-Q101 | - | PG-SOT23 | Automotive | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
BUZ30AHXKSA1MOSFET N-CH 200V 21A TO220-3 Infineon Technologies |
3,465 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 21A (Tc) | 10V | 130mOhm @ 13.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 1900 pF @ 25 V | - | - | PG-TO220-3-1 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
BUZ31L HMOSFET N-CH 200V 13.5A TO220-3 Infineon Technologies |
5,954 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13.5A (Tc) | 5V | 200mOhm @ 7A, 5V | Through Hole | 2V @ 1mA | - | 200 V | ±20V | 1600 pF @ 25 V | - | - | PG-TO220-3 | - | 95W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPP083N10N5AKSA1MOSFET N-CH 100V 73A TO220-3 Infineon Technologies |
3,287 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 73A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | Through Hole | 3.8V @ 49µA | 37 nC @ 10 V | 100 V | ±20V | 2730 pF @ 50 V | - | - | PG-TO220-3 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BUZ32 HMOSFET N-CH 200V 9.5A TO220-3 Infineon Technologies |
9,378 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
|
BUZ73H3046XKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
3,025 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Through Hole | 4V @ 1mA | - | 200 V | ±20V | 530 pF @ 25 V | - | - | PG-TO220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
