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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLR120NTRRMOSFET N-CH 100V 10A DPAK Infineon Technologies |
6,381 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | Surface Mount | 2V @ 250µA | 20 nC @ 5 V | 100 V | ±16V | 440 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF3704ZCSTRRPMOSFET N-CH 20V 67A D2PAK Infineon Technologies |
6,321 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 4.5V, 10V | 7.9mOhm @ 21A, 10V | Surface Mount | 2.55V @ 250µA | 13 nC @ 4.5 V | 20 V | ±20V | 1220 pF @ 10 V | - | - | D2PAK | - | 57W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRF3704ZCSTRLPMOSFET N-CH 20V 67A D2PAK Infineon Technologies |
3,050 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 67A (Tc) | 4.5V, 10V | 7.9mOhm @ 21A, 10V | Surface Mount | 2.55V @ 250µA | 13 nC @ 4.5 V | 20 V | ±20V | 1220 pF @ 10 V | - | - | D2PAK | - | 57W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUXCLFZ24NSTRLMOSFET N-CH 55V 17A D2PAK Infineon Technologies |
8,044 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 55 V | ±20V | 370 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFZ46NSTRRPBFMOSFET N-CH 55V 53A D2PAK Infineon Technologies |
8,386 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | Surface Mount | 4V @ 250µA | 72 nC @ 10 V | 55 V | ±20V | 1696 pF @ 25 V | - | - | D2PAK | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFL024ZMOSFET N-CH 55V 5.1A SOT223 Infineon Technologies |
7,797 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.1A (Ta) | 10V | 57.5mOhm @ 3.1A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 55 V | ±20V | 340 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRFR3710ZPBFMOSFET N-CH 100V 42A DPAK Infineon Technologies |
9,302 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | Surface Mount | 4V @ 250µA | 100 nC @ 10 V | 100 V | ±20V | 2930 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFZ24NLPBFMOSFET N-CH 55V 17A TO262 Infineon Technologies |
4,651 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | 20 nC @ 10 V | 55 V | ±20V | 370 pF @ 25 V | - | - | TO-262 | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF8721TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
4,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
ISP13DP06NMSATMA1MOSFET P-CH 60V SOT223 Infineon Technologies |
3,000 | - |
|
数据表 |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 2.8A (Ta) | - | - | Surface Mount | - | - | 60 V | ±20V | - | - | - | PG-SOT223 | - | - | - |
