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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRFS4310MOSFET N-CH 100V 75A D2PAK Infineon Technologies |
7,344 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 250 nC @ 10 V | 100 V | ±20V | 7670 pF @ 50 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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|
AUIRFS4610MOSFET N-CH 100V 73A D2PAK Infineon Technologies |
2,956 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | Surface Mount | 4V @ 100µA | 140 nC @ 10 V | 100 V | ±20V | 3550 pF @ 50 V | - | - | D2PAK | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFSL4310MOSFET N-CH 100V 75A TO262 Infineon Technologies |
6,752 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | - | 7mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 250 nC @ 10 V | 100 V | - | 7670 pF @ 50 V | - | - | TO-262 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
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AUIRFU4104MOSFET N-CH 40V 42A IPAK Infineon Technologies |
6,891 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | Through Hole | 4V @ 250µA | 89 nC @ 10 V | 40 V | ±20V | 2950 pF @ 25 V | - | - | IPAK | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFZ44VZSMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
4,200 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | Surface Mount | 4V @ 250µA | 65 nC @ 10 V | 60 V | ±20V | 1690 pF @ 25 V | - | - | D2PAK | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFZ44VZSTRLMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
6,326 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | Surface Mount | 4V @ 250µA | 65 nC @ 10 V | 60 V | ±20V | 1690 pF @ 25 V | - | - | D2PAK | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRFZ44ZMOSFET N-CH 55V 51A TO220 Infineon Technologies |
9,029 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | Through Hole | 4V @ 250µA | 43 nC @ 10 V | 55 V | ±20V | 1420 pF @ 25 V | - | - | TO-220 | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
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AUIRFZ44ZSMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
8,170 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | Surface Mount | 4V @ 250µA | 43 nC @ 10 V | 55 V | ±20V | 1420 pF @ 25 V | - | - | D2PAK | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFZ44ZSTRLMOSFET N-CH 55V 51A D2PAK Infineon Technologies |
3,764 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | Surface Mount | 4V @ 250µA | 43 nC @ 10 V | 55 V | ±20V | 1420 pF @ 25 V | - | - | D2PAK | - | 80W (Tc) | -55°C ~ 175°C (TJ) |
|
IPW65R230CFD7AXKSA1650V COOLMOS CFD7A SJ POWER DEVI Infineon Technologies |
3 | - |
|
数据表 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | Through Hole | 4.5V @ 260µA | 23 nC @ 10 V | 650 V | ±20V | 1044 pF @ 400 V | AEC-Q101 | - | PG-TO247-3 | Automotive | 63W (Tc) | -40°C ~ 150°C (TJ) |
