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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFR4104

AUIRFR4104

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

3,452 -
AUIRFR4104

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 5.5mOhm @ 42A, 10V Surface Mount 4V @ 250µA 89 nC @ 10 V 40 V ±20V 2950 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4105

AUIRFR4105

MOSFET N-CH 55V 20A DPAK

Infineon Technologies

8,274 -
AUIRFR4105

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 45mOhm @ 16A, 10V Surface Mount 4V @ 250µA 34 nC @ 10 V 55 V ±20V 700 pF @ 25 V - - TO-252AA (DPAK) - 68W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4105TRL

AUIRFR4105TRL

MOSFET N-CH 55V 20A DPAK

Infineon Technologies

5,017 -
AUIRFR4105TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20A (Tc) - 45mOhm @ 16A, 10V Surface Mount 4V @ 250µA 34 nC @ 10 V 55 V - 700 pF @ 25 V - - TO-252AA (DPAK) - 68W (Tc) -55°C ~ 175°C (TJ)
AUIRFR4105Z

AUIRFR4105Z

MOSFET N-CH 55V 20A DPAK

Infineon Technologies

6,262 -
AUIRFR4105Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 24.5mOhm @ 18A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 55 V ±20V 740 pF @ 25 V - - TO-252AA (DPAK) - 48W (Tc) -55°C ~ 175°C (TJ)
AUIRFR48Z

AUIRFR48Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

6,261 -
AUIRFR48Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 11mOhm @ 37A, 10V Surface Mount 4V @ 50µA 60 nC @ 10 V 55 V ±20V 1720 pF @ 25 V - - TO-252AA (DPAK) - 91W (Tc) -55°C ~ 175°C (TJ)
AUIRFR5305

AUIRFR5305

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

2,519 -
AUIRFR5305

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 65mOhm @ 16A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 55 V ±20V 1200 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFR5410

AUIRFR5410

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

7,812 -
AUIRFR5410

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 205mOhm @ 7.8A, 10V Surface Mount 4V @ 250µA 58 nC @ 10 V 100 V ±20V 760 pF @ 25 V - - TO-252AA (DPAK) - 66W (Tc) -55°C ~ 150°C (TJ)
AUIRFR5505

AUIRFR5505

MOSFET P-CH 55V 18A DPAK

Infineon Technologies

5,505 -
AUIRFR5505

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 110mOhm @ 9.6A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 55 V ±20V 650 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
AUIRFR5505TRL

AUIRFR5505TRL

MOSFET P-CH 55V 18A DPAK

Infineon Technologies

2,087 -
AUIRFR5505TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 110mOhm @ 9.6A, 10V Surface Mount 4V @ 250µA 32 nC @ 10 V 55 V ±20V 650 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
AUIRFR6215

AUIRFR6215

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

7,921 -
AUIRFR6215

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete P-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 295mOhm @ 6.6A, 10V Surface Mount 4V @ 250µA 66 nC @ 10 V 150 V ±20V 860 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
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