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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AUIRFP2907Z

AUIRFP2907Z

MOSFET N-CH 75V 170A TO247AC

Infineon Technologies

9,883 -
AUIRFP2907Z

数据表

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 170A (Tc) 10V 4.5mOhm @ 90A, 10V Through Hole 4V @ 250µA 270 nC @ 10 V 75 V ±20V 7500 pF @ 25 V - - TO-247AC - 310W (Tc) -55°C ~ 175°C (TJ)
AUIRFR120ZTRL

AUIRFR120ZTRL

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies

3,359 -
AUIRFR120ZTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V Surface Mount 4V @ 25µA 10 nC @ 10 V 100 V ±20V 310 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2307Z

AUIRFR2307Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

9,148 -
AUIRFR2307Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 16mOhm @ 32A, 10V Surface Mount 4V @ 100µA 75 nC @ 10 V 75 V ±20V 2190 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
IPB65R155CFD7ATMA1

IPB65R155CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies

6,960 -
IPB65R155CFD7ATMA1

数据表

CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 155mOhm @ 6.4A, 10V Surface Mount 4.5V @ 320µA 28 nC @ 10 V 650 V ±20V 1283 pF @ 400 V - - PG-TO263-3 - 77W (Tc) -55°C ~ 150°C (TJ)
IPWS65R075CFD7AXKSA1

IPWS65R075CFD7AXKSA1

MOSFET N-CH 650V 32A TO247-3-41

Infineon Technologies

6,313 -
IPWS65R075CFD7AXKSA1

数据表

CoolMOS™ CFD7A TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 75mOhm @ 16.4A, 10V Through Hole 4.5V @ 820µA 68 nC @ 10 V 650 V ±20V 3288 pF @ 400 V AEC-Q101 - PG-TO247-3-41 Automotive 171W (Tc) -40°C ~ 150°C (TJ)
AUIRFR2607Z

AUIRFR2607Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

9,661 -
AUIRFR2607Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 22mOhm @ 30A, 10V Surface Mount 4V @ 50µA 51 nC @ 10 V 75 V ±20V 1440 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2607ZTRL

AUIRFR2607ZTRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

2,863 -
AUIRFR2607ZTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 22mOhm @ 30A, 10V Surface Mount 4V @ 50µA 51 nC @ 10 V 75 V ±20V 1440 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFR2905Z

AUIRFR2905Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

7,330 -
AUIRFR2905Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 14.5mOhm @ 36A, 10V Surface Mount 4V @ 250µA 44 nC @ 10 V 55 V ±20V 1380 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
AUIRFR3504Z

AUIRFR3504Z

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

2,064 -
AUIRFR3504Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 9mOhm @ 42A, 10V Surface Mount 4V @ 250µA 45 nC @ 10 V 40 V ±20V 1510 pF @ 25 V - - TO-252AA (DPAK) - 90W (Tc) -55°C ~ 175°C (TJ)
AUIRFR3710Z

AUIRFR3710Z

MOSFET N-CH 100V 42A DPAK

Infineon Technologies

2,329 -
AUIRFR3710Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 18mOhm @ 33A, 10V Surface Mount 4V @ 250µA 100 nC @ 10 V 100 V ±20V 2930 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
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