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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF3805S-7PMOSFET N-CH 55V 160A D2PAK Infineon Technologies |
5,387 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | Surface Mount | 4V @ 250µA | 200 nC @ 10 V | 55 V | ±20V | 7820 pF @ 25 V | - | - | D2PAK (7-Lead) | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF4104SMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
9,432 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 100 nC @ 10 V | 40 V | ±20V | 3000 pF @ 25 V | - | - | D2PAK | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF4905MOSFET P-CH 55V 74A TO220AB Infineon Technologies |
5,000 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | Through Hole | 4V @ 250µA | 180 nC @ 10 V | 55 V | ±20V | 3400 pF @ 25 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF540ZSMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
2,704 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 100 V | ±20V | 1770 pF @ 25 V | - | - | PG-TO263-3 | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF540ZSTRLMOSFET N-CH 100V 36A D2PAK Infineon Technologies |
4,522 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 100 V | ±20V | 1770 pF @ 25 V | - | - | PG-TO263-3 | - | 92W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF7665S2TRMOSFET N-CH 100V 4.1A DIRECTFET Infineon Technologies |
4,499 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric SB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | Surface Mount | 5V @ 25µA | 13 nC @ 10 V | 100 V | ±20V | 515 pF @ 25 V | - | - | DIRECTFET SB | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF7738L2TRMOSFET N-CH 40V 35A DIRECTFET Infineon Technologies |
6,929 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric L6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 35A (Ta), 130A (Tc) | 10V | 1.6mOhm @ 109A, 10V | Surface Mount | 4V @ 250µA | 194 nC @ 10 V | 40 V | ±20V | 7471 pF @ 25 V | - | - | DIRECTFET L6 | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFB3207MOSFET N-CH 75V 75A TO220AB Infineon Technologies |
3,149 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 260 nC @ 10 V | 75 V | ±20V | 7600 pF @ 50 V | - | - | TO-220AB | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFB4410MOSFET N-CH 100V 75A TO220AB Infineon Technologies |
8,960 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 10mOhm @ 58A, 10V | Through Hole | 4V @ 150µA | 180 nC @ 10 V | 100 V | ±20V | 5150 pF @ 50 V | - | - | TO-220AB | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRFB4610MOSFET N-CH 100V 73A TO220AB Infineon Technologies |
9,353 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | Through Hole | 4V @ 100µA | 140 nC @ 10 V | 100 V | ±20V | 3550 pF @ 50 V | - | - | TO-220AB | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
