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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF2804MOSFET N-CH 40V 195A TO220 Infineon Technologies |
4,899 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 6450 pF @ 25 V | - | - | TO-220 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2804SMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
7,478 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 6450 pF @ 25 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2804S-7PMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
4,693 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | Surface Mount | 4V @ 250µA | 260 nC @ 10 V | 40 V | ±20V | 6930 pF @ 25 V | - | - | D2PAK (7-Lead) | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF2907ZMOSFET N-CH 75V 75A TO220AB Infineon Technologies |
7,031 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 270 nC @ 10 V | 75 V | ±20V | 7500 pF @ 25 V | - | - | TO-220AB | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF2907ZS7PTLMOSFET N-CH 75V 180A D2PAK Infineon Technologies |
3,077 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 3.8mOhm @ 110A, 10V | Surface Mount | 4V @ 250µA | 260 nC @ 10 V | 75 V | ±20V | 7580 pF @ 25 V | - | - | D2PAK (7-Lead) | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3205ZSMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
8,294 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | Surface Mount | 4V @ 250µA | 110 nC @ 10 V | 55 V | ±20V | 3450 pF @ 25 V | - | - | D2PAK | - | 170W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3710ZMOSFET N-CH 100V 59A TO220AB Infineon Technologies |
6,237 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | Through Hole | 4V @ 250µA | 120 nC @ 10 V | 100 V | ±20V | 2900 pF @ 25 V | - | - | TO-220AB | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3710ZSMOSFET N-CH 100V 59A D2PAK Infineon Technologies |
4,306 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | Surface Mount | 4V @ 250µA | 120 nC @ 10 V | 100 V | ±20V | 2900 pF @ 25 V | - | - | PG-TO263-3 | - | 160W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF3805L-7PMOSFET N-CH 55V 160A TO262 Infineon Technologies |
8,817 | - |
|
数据表 |
HEXFET® | TO-262-7 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | Through Hole | 4V @ 250µA | 200 nC @ 10 V | 55 V | ±20V | 7820 pF @ 25 V | - | - | TO-262 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF3805SMOSFET N-CH 55V 160A D2PAK Infineon Technologies |
5,167 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 3.3mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 290 nC @ 10 V | 55 V | ±20V | 7960 pF @ 25 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
