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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF1010EZSMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
4,606 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | Surface Mount | 4V @ 250µA | 86 nC @ 10 V | 60 V | ±20V | 2810 pF @ 25 V | - | - | PG-TO263-3 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF1010EZSTRLMOSFET N-CH 60V 75A D2PAK Infineon Technologies |
7,745 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | Surface Mount | 4V @ 250µA | 86 nC @ 10 V | 60 V | ±20V | 2810 pF @ 25 V | - | - | PG-TO263-3 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF1010ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
6,906 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 95 nC @ 10 V | 55 V | - | 2840 pF @ 25 V | - | - | TO-220AB | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF1010ZSMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
9,297 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 95 nC @ 10 V | 55 V | ±20V | 2840 pF @ 25 V | - | - | PG-TO263-3 | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF1324SMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
7,766 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | Surface Mount | 4V @ 250µA | 240 nC @ 10 V | 24 V | ±20V | 7590 pF @ 24 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF1324S-7PMOSFET N-CH 24V 240A D2PAK Infineon Technologies |
8,939 | - |
|
数据表 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240A (Tc) | - | 1mOhm @ 160A, 10V | Surface Mount | 4V @ 250µA | 252 nC @ 10 V | 24 V | - | 7700 pF @ 19 V | - | - | D2PAK (7-Lead) | - | - | - |
|
AUIRF1324STRLMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
3,400 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | Surface Mount | 4V @ 250µA | 240 nC @ 10 V | 24 V | ±20V | 7590 pF @ 24 V | - | - | D2PAK | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF1404ZLMOSFET N-CH 40V 160A TO262 Infineon Technologies |
4,182 | - |
|
数据表 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | Through Hole | 4V @ 250µA | 150 nC @ 10 V | 40 V | ±20V | 4340 pF @ 25 V | - | - | TO-262 | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
AUIRF1404ZSMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
8,710 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 150 nC @ 10 V | 40 V | ±20V | 4340 pF @ 25 V | - | - | D2PAK | - | 200W (Tc) | -55°C ~ 175°C (TJ) |
|
|
AUIRF1405ZSMOSFET N-CH 55V 150A D2PAK Infineon Technologies |
5,006 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | Surface Mount | 4V @ 250µA | 180 nC @ 10 V | 55 V | ±20V | 4780 pF @ 25 V | - | - | D2PAK | - | 230W (Tc) | -55°C ~ 175°C (TJ) |
