Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 549

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPW60R280E6FKSA1 MOSFET N-CH 600V 13.8A TO247-3 Infineon Technologies	2,933	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	Through Hole	3.5V @ 430µA	43 nC @ 10 V	600 V	±20V	950 pF @ 100 V	-	-	PG-TO247-3-1	-	104W (Tc)	-55°C ~ 150°C (TJ)
IPB80N06S2L07ATMA3 MOSFET N-CH 55V 80A TO263-3 Infineon Technologies	3,134	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	4.5V, 10V	6.7mOhm @ 60A, 10V	Surface Mount	2V @ 150µA	130 nC @ 10 V	55 V	±20V	3160 pF @ 25 V	-	-	PG-TO263-3-2	-	210W (Tc)	-55°C ~ 175°C (TJ)
IRLR6225PBF MOSFET N-CH 20V 100A DPAK Infineon Technologies	4,987	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	2.5V, 4.5V	4mOhm @ 21A, 4.5V	Surface Mount	1.1V @ 50µA	72 nC @ 4.5 V	20 V	±12V	3770 pF @ 10 V	-	-	DPAK	-	63W (Tc)	-50°C ~ 150°C (TJ)
IPD60R1K4C6 MOSFET N-CH 600V 3.2A TO252-3 Infineon Technologies	5,718	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	3.2A (Tc)	10V	1.4Ohm @ 1.1A, 10V	Surface Mount	3.5V @ 90µA	9.4 nC @ 10 V	600 V	±20V	200 pF @ 100 V	-	-	PG-TO252-3	-	28.4W (Tc)	-55°C ~ 150°C (TJ)
IPD60R2K0C6BTMA1 MOSFET N-CH 600V 2.4A TO252-3 Infineon Technologies	8,184	-	询价单	数据表	CoolMOS™ C6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.4A (Tc)	10V	2Ohm @ 760mA, 10V	Surface Mount	3.5V @ 60µA	6.7 nC @ 10 V	600 V	±20V	140 pF @ 100 V	-	-	PG-TO252-3	-	22.3W (Tc)	-55°C ~ 150°C (TJ)
IQE065N10NM5CGSCATMA1 OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies	4,064	-	询价单	数据表	OptiMOS™ 5	9-PowerWDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta), 85A (Tc)	6V, 10V	6.5mOhm @ 20A, 10V	Surface Mount	3.8V @ 48µA	43 nC @ 10 V	100 V	±20V	3000 pF @ 50 V	-	-	PG-WHTFN-9-1	-	2.5W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
IRF60DM206 MOSFET N-CH 60V 130A DIRECTFET Infineon Technologies	2,381	-	询价单	数据表	StrongIRFET™	DirectFET™ Isometric ME	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	130A (Tc)	6V, 10V	2.9mOhm @ 80A, 10V	Surface Mount	3.7V @ 150µA	200 nC @ 10 V	60 V	±20V	6530 pF @ 25 V	-	-	DirectFET™ Isometric ME	-	96W (Tc)	-55°C ~ 150°C (TJ)
IPW65R060CFD7XKSA1 650V FET COOLMOS TO247 Infineon Technologies	3,658	-	询价单	数据表	CoolMOS™ CFD7	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	60mOhm @ 16.4A, 10V	Through Hole	4.5V @ 860µA	68 nC @ 10 V	650 V	±20V	3288 pF @ 400 V	-	-	PG-TO247-3	-	171W (Tc)	-55°C ~ 150°C (TJ)
IPW65R099C6FKSA1 MOSFET N-CH 650V 38A TO247-3 Infineon Technologies	9,150	-	询价单	数据表	CoolMOS™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 12.8A, 10V	Through Hole	3.5V @ 1.2mA	127 nC @ 10 V	650 V	±20V	2780 pF @ 100 V	-	-	PG-TO247-3-1	-	278W (Tc)	-55°C ~ 150°C (TJ)
IRF6716MTRPBF MOSFET N-CH 25V 39A DIRECTFET Infineon Technologies	6,418	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	39A (Ta), 180A (Tc)	4.5V, 10V	1.6mOhm @ 40A, 10V	Surface Mount	2.4V @ 100µA	59 nC @ 4.5 V	25 V	±20V	5150 pF @ 13 V	-	-	DIRECTFET™ MX	-	3.6W (Ta), 78W (Tc)	-40°C ~ 150°C (TJ)

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