Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 548

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD60R450E6BTMA1 MOSFET N-CH 600V 9.2A TO252-3 Infineon Technologies	8,792	-	询价单	数据表	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	450mOhm @ 3.4A, 10V	Surface Mount	3.5V @ 280µA	28 nC @ 10 V	600 V	±20V	620 pF @ 100 V	-	-	PG-TO252-3	-	74W (Tc)	-55°C ~ 150°C (TJ)
IPD60R600E6 MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies	5,582	-	询价单	数据表	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Surface Mount	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO252-3	-	63W (Tc)	-55°C ~ 150°C (TJ)
IPD60R750E6BTMA1 MOSFET N-CH 600V 5.7A TO252-3 Infineon Technologies	7,535	-	询价单	数据表	CoolMOS™ E6	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	750mOhm @ 2A, 10V	Surface Mount	3.5V @ 170µA	17.2 nC @ 10 V	600 V	±20V	373 pF @ 100 V	-	-	PG-TO252-3	-	48W (Tc)	-55°C ~ 150°C (TJ)
IPP60R450E6XKSA1 MOSFET N-CH 600V 9.2A TO220-3 Infineon Technologies	2,929	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	450mOhm @ 3.4A, 10V	Through Hole	3.5V @ 280µA	28 nC @ 10 V	600 V	±20V	620 pF @ 100 V	-	-	PG-TO220-3	-	74W (Tc)	-55°C ~ 150°C (TJ)
IPP60R520E6XKSA1 MOSFET N-CH 600V 8.1A TO220-3 Infineon Technologies	6,039	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.1A (Tc)	10V	520mOhm @ 2.8A, 10V	Through Hole	3.5V @ 230µA	23.4 nC @ 10 V	600 V	±20V	512 pF @ 100 V	-	-	PG-TO220-3	-	66W (Tc)	-55°C ~ 150°C (TJ)
IPP60R600E6XKSA1 MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies	3,408	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	Through Hole	3.5V @ 200µA	20.5 nC @ 10 V	600 V	±20V	440 pF @ 100 V	-	-	PG-TO220-3	-	63W (Tc)	-55°C ~ 150°C (TJ)
IPP60R750E6XKSA1 MOSFET N-CH 600V 5.7A TO220-3 Infineon Technologies	4,925	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	750mOhm @ 2A, 10V	Through Hole	3.5V @ 170µA	17.2 nC @ 10 V	600 V	±20V	373 pF @ 100 V	-	-	PG-TO220-3	-	48W (Tc)	-55°C ~ 150°C (TJ)
IPP65R280E6XKSA1 MOSFET N-CH 650V 13.8A TO220-3 Infineon Technologies	4,400	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.8A (Tc)	10V	280mOhm @ 4.4A, 10V	Through Hole	3.5V @ 440µA	45 nC @ 10 V	650 V	±20V	950 pF @ 100 V	-	-	PG-TO220-3	-	104W (Tc)	-55°C ~ 150°C (TJ)
IPP65R380E6XKSA1 MOSFET N-CH 650V 10.6A TO220-3 Infineon Technologies	5,227	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.6A (Tc)	10V	380mOhm @ 3.2A, 10V	Through Hole	3.5V @ 320µA	39 nC @ 10 V	650 V	±20V	710 pF @ 100 V	-	-	PG-TO220-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPB120N06S403ATMA2 MOSFET N-CH 60V 120A TO263-3 Infineon Technologies	7,740	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	3.2mOhm @ 100A, 10V	Surface Mount	4V @ 120µA	160 nC @ 10 V	60 V	±20V	13150 pF @ 25 V	AEC-Q101	-	PG-TO263-3-2	Automotive	167W (Tc)	-55°C ~ 175°C (TJ)

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