Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 547

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPP65R110CFDAAKSA1 MOSFET N-CH 650V 31.2A TO220-3 Infineon Technologies	6,387	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	31.2A (Tc)	10V	110mOhm @ 12.7A, 10V	Through Hole	4.5V @ 1.3mA	118 nC @ 10 V	650 V	±20V	3240 pF @ 100 V	AEC-Q101	-	PG-TO220-3	Automotive	277.8W (Tc)	-40°C ~ 150°C (TJ)
IRL3705NSTRLPBF MOSFET N-CH 55V 89A D2PAK Infineon Technologies	8,452	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	89A (Tc)	4V, 10V	10mOhm @ 46A, 10V	Surface Mount	2V @ 250µA	98 nC @ 5 V	55 V	±16V	3600 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 170W (Tc)	-55°C ~ 175°C (TJ)
IPB50N10S3L16ATMA1 MOSFET N-CH 100V 50A TO263-3 Infineon Technologies	4,627	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	15.4mOhm @ 50A, 10V	Surface Mount	2.4V @ 60µA	64 nC @ 10 V	100 V	±20V	4180 pF @ 25 V	-	-	PG-TO263-3-2	-	100W (Tc)	-55°C ~ 175°C (TJ)
IRFSL3207ZPBF MOSFET N-CH 75V 120A TO262 Infineon Technologies	4,459	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	4.1mOhm @ 75A, 10V	Through Hole	4V @ 150µA	170 nC @ 10 V	75 V	±20V	6920 pF @ 50 V	-	-	TO-262	-	300W (Tc)	-55°C ~ 175°C (TJ)
IPD80R360P7ATMA1 MOSFET N-CH 800V 13A TO252-3 Infineon Technologies	7,946	-	询价单	数据表	CoolMOS™ P7	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	360mOhm @ 5.6A, 10V	Surface Mount	3.5V @ 280µA	30 nC @ 10 V	800 V	±20V	930 pF @ 500 V	-	-	PG-TO252-3	-	84W (Tc)	-55°C ~ 150°C (TJ)
IPB60R180C7ATMA1 MOSFET N-CH 600V 13A TO263-3 Infineon Technologies	9,716	-	询价单	数据表	CoolMOS™ C7	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	130mOhm @ 5.3A, 10V	Surface Mount	4V @ 260µA	24 nC @ 10 V	600 V	±20V	1080 pF @ 400 V	-	-	PG-TO263-3	-	68W (Tc)	-55°C ~ 150°C (TJ)
IPA60R450E6XKSA1 MOSFET N-CH 600V 9.2A TO220-FP Infineon Technologies	7,277	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	450mOhm @ 3.4A, 10V	Through Hole	3.5V @ 280µA	28 nC @ 10 V	600 V	±20V	620 pF @ 100 V	-	-	PG-TO220-FP	-	30W (Tc)	-55°C ~ 150°C (TJ)
IPA60R520E6XKSA1 MOSFET N-CH 600V 8.1A TO220-FP Infineon Technologies	7,725	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.1A (Tc)	10V	520mOhm @ 2.8A, 10V	Through Hole	3.5V @ 230µA	23.4 nC @ 10 V	600 V	±20V	512 pF @ 100 V	-	-	PG-TO220-FP	-	29W (Tc)	-55°C ~ 150°C (TJ)
IPA60R750E6XKSA1 MOSFET N-CH 600V 5.7A TO220-FP Infineon Technologies	6,793	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	750mOhm @ 2A, 10V	Through Hole	3.5V @ 170µA	17.2 nC @ 10 V	600 V	±20V	373 pF @ 100 V	-	-	PG-TO220-FP	-	27W (Tc)	-55°C ~ 150°C (TJ)
IPZA60R060P7XKSA1 MOSFET N-CH 600V 48A TO247-4 Infineon Technologies	6,866	-	询价单	数据表	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	48A (Tc)	10V	60mOhm @ 15.9A, 10V	Through Hole	4V @ 800µA	67 nC @ 10 V	600 V	±20V	2895 pF @ 400 V	-	-	PG-TO247-4	-	164W (Tc)	-55°C ~ 150°C (TJ)

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