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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLU8256PBFMOSFET N-CH 25V 81A IPAK Infineon Technologies |
2,019 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | Through Hole | 2.35V @ 25µA | 15 nC @ 4.5 V | 25 V | ±20V | 1470 pF @ 13 V | - | - | IPAK | - | 63W (Tc) | -55°C ~ 175°C (TJ) |
|
IPW60R125P6XKSA1MOSFET N-CH 600V 30A TO247-3 Infineon Technologies |
7,256 | - |
|
数据表 |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | Through Hole | 4.5V @ 960µA | 56 nC @ 10 V | 600 V | ±20V | 2660 pF @ 100 V | - | - | PG-TO247-3 | - | 219W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRLU8259PBFMOSFET N-CH 25V 57A IPAK Infineon Technologies |
2,396 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | Through Hole | 2.35V @ 25µA | 10 nC @ 4.5 V | 25 V | ±20V | 900 pF @ 13 V | - | - | IPAK | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
|
IPLK80R600P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
3,923 | - |
|
数据表 |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 800 V | ±20V | - | - | - | PG-TDSON-8 | - | - | - |
|
IPP60R099P6XKSA1MOSFET N-CH 600V 37.9A TO220-3 Infineon Technologies |
9,125 | - |
|
数据表 |
CoolMOS™ P6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | Through Hole | 4.5V @ 1.21mA | 70 nC @ 10 V | 600 V | ±20V | 3330 pF @ 100 V | - | - | PG-TO220-3 | - | 278W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPW60R099C7XKSA1MOSFET N-CH 600V 14A TO247-3 Infineon Technologies |
4,456 | - |
|
数据表 |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 99mOhm @ 9.7A, 10V | Through Hole | 4V @ 490µA | 42 nC @ 10 V | 600 V | ±20V | 1819 pF @ 400 V | - | - | PG-TO247-3 | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SPP15P10PLHXKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
2,009 | - |
|
数据表 |
SIPMOS® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | Through Hole | 2V @ 1.54mA | 62 nC @ 10 V | 100 V | ±20V | 1490 pF @ 25 V | - | - | PG-TO220-3 | - | 128W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP028N08N3GXKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
6,539 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 6V, 10V | 2.8mOhm @ 100A, 10V | Through Hole | 3.5V @ 270µA | 206 nC @ 10 V | 80 V | ±20V | 14200 pF @ 40 V | - | - | PG-TO220-3 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFHM830DTRPBFMOSFET N-CH 30V 20A/40A PQFN Infineon Technologies |
3,491 | - |
|
数据表 |
HEXFET® | 8-VQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | Surface Mount | 2.35V @ 50µA | 27 nC @ 10 V | 30 V | ±20V | 1797 pF @ 25 V | - | - | PQFN (3x3) | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) |
|
IAUC120N04S6N009ATMA1MOSFET N-CH 40V 120A 8TDSON-33 Infineon Technologies |
2,103 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 7V, 10V | 0.9mOhm @ 60A, 10V | Surface Mount | 3.4V @ 90µA | 115 nC @ 10 V | 40 V | ±20V | 7360 pF @ 25 V | AEC-Q101 | - | PG-TDSON-8-33 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
