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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF8714TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
3,490 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPU103N08N3 GMOSFET N-CH 80V 50A TO251-3 Infineon Technologies |
8,920 | - |
|
数据表 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 6V, 10V | 10.3mOhm @ 46A, 10V | Through Hole | 3.5V @ 46µA | 35 nC @ 10 V | 80 V | ±20V | 2410 pF @ 40 V | - | - | PG-TO251-3 | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLR3410TRLMOSFET N-CH 100V 17A DPAK Infineon Technologies |
2,823 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | Surface Mount | 2V @ 250µA | 34 nC @ 5 V | 100 V | ±16V | 800 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF5800MOSFET P-CH 30V 4A MICRO6 Infineon Technologies |
2,830 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | Surface Mount | 1V @ 250µA | 17 nC @ 10 V | 30 V | ±20V | 535 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
BSP320SL6327HTSA1MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies |
8,313 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | Surface Mount | 4V @ 20µA | 12 nC @ 10 V | 60 V | ±20V | 340 pF @ 25 V | - | - | PG-SOT223-4-21 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
|
BSP320SL6433HTMA1MOSFET N-CH 60V 2.9A SOT223-4 Infineon Technologies |
6,971 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | Surface Mount | 4V @ 20µA | 12 nC @ 10 V | 60 V | ±20V | 340 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
BSC079N03LSCGATMA1MOSFET N-CH 30V 14A/50A TDSON Infineon Technologies |
9,582 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Ta), 50A (Tc) | 4.5V, 10V | 7.9mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 19 nC @ 10 V | 30 V | ±20V | 1600 pF @ 15 V | - | - | PG-TDSON-8-1 | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD06P002NSAUMA1MOSFET P-CH 60V 35A TO252-3 Infineon Technologies |
5,138 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | Surface Mount | 4V @ 1.7mA | 63 nC @ 10 V | 60 V | ±20V | 2500 pF @ 30 V | - | - | PG-TO252-3-313 | - | 125W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IAUCN04S7N040DATMA1MOSFET_(20V 40V) Infineon Technologies |
497 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ISZ056N03LF2SATMA1ISZ056N03LF2SATMA1 Infineon Technologies |
5,000 | - |
|
数据表 |
StrongIRFET™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 72A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | Surface Mount | 2.35V @ 30µA | 11 nC @ 4.5 V | 30 V | ±20V | 1012 pF @ 15 V | - | - | PG-TSDSON-8 FL | - | 3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) |
